CAJ | 학술논문

本文报道了采用化学气相沉积法制备红外ZnS体块晶体的工艺及其性能.并用傅立叶红外光谱仪测试了材料的红外性能,研究了晶体缺陷对材料红外透过率的影响.结果表明:通过优化生长工艺,使反应室的压力在500～1000Pa之间变化,沉积温度控制在550～650℃之间,可以制备出厚度均匀,红外透过率(3-5μm和8～12μm)在70%以上,尺寸达250mm×250mm×15mm高质量的ZnS体块晶体.
본문보도료채용화학기상침적법제비홍외ZnS체괴정체적공예급기성능.병용부립협홍외광보의측시료재료적홍외성능,연구료정체결함대재료홍외투과솔적영향.결과표명:통과우화생장공예,사반응실적압력재500～1000Pa지간변화,침적온도공제재550～650℃지간,가이제비출후도균균,홍외투과솔(3-5μm화8～12μm)재70%이상,척촌체250mm×250mm×15mm고질량적ZnS체괴정체.
The preparation and characterization of infrared ZnS bulk crystal by chemical vapor deposition (CVD) method is reported in this paper. Deposition process consists of the nucleation and growth process of ZnS. The chamber pressure is kept at 500-1000Pa, the substrate temperature is controlled within 550-650℃. The active raw gases of H2S and optimum technique for ZnS growth are used. The size of infrared ZnS bulk crystal is up to 250mm×250mm×15mm . The structural and optical properties of the crystal have been analyzed by using infrared spectroscopy. The results show that the crystal obtained under these conditions is highly uniform and transparent. The transmittance from 3μm to 5μm and from 8μm to 12μm is over 70%.