稀土学报(英文版)
稀土學報(英文版)
희토학보(영문판)
JOURNAL OF RARE EARTHS
2002年
5期
522-524
,共3页
杨胜%何大伟%成正维%邓朝勇%关亚菲
楊勝%何大偉%成正維%鄧朝勇%關亞菲
양성%하대위%성정유%산조용%관아비
rare earths%thin Film Electroluminescence(TFEL)%hot e lectron,acceleration
A novel ZnS:TmF3 TFEL device with the structure of ITO/SiO2/ ZnS:TmF3 /SiO2/ZnS:TmF3/SiO2/Al was prepared by e-beam evaporation method. Th e EL emission spectra show that the brightness of the novel structure devices gr eatly increases compared with that of devices with traditional double insulat or structure, and the ratio of blue emission to red emission of the novel structure device is also improved. The improvement of the EL characteristics of this kind TFEL device is attributed to both of the electron acceleration and the ZnS/SiO2 interface.
