CAJ | 학술논문

通过模拟对ON、OFF、TG三种偏置下PD SOI NMOSFET的总剂量辐照效应进行了研究.模拟发现正沟道的最坏偏置是ON偏置,背沟道的最坏偏置与总剂量有关.当总剂量大时,背沟道的最坏偏置是OFF偏置;当总剂量小时则是TG偏置.而NMOSFET的最坏偏置则取决于起主要作用的是正栅还是背栅.由于辐照产生电子空穴对的过程与电场分布强相关,通过分析不同偏置下电场分布的差异确定最坏偏置的内在机制.
통과모의대ON、OFF、TG삼충편치하PD SOI NMOSFET적총제량복조효응진행료연구.모의발현정구도적최배편치시ON편치,배구도적최배편치여총제량유관.당총제량대시,배구도적최배편치시OFF편치;당총제량소시칙시TG편치.이NMOSFET적최배편치칙취결우기주요작용적시정책환시배책.유우복조산생전자공혈대적과정여전장분포강상관,통과분석불동편치하전장분포적차이학정최배편치적내재궤제.
By using ISE,PD SOI NMOSFET was irradiated with different bias configuration to explore which bias configuration is the worst-case bias.The simulation results indicate that the worst case bias for the front channel is the ON bias configuration,and that for the back channel is related to the total dose.If the total dose is higher,the worst case bias is the OFF bias configuration,or the worst case bias is the TG bias configuration when the total dose is lower.The worst case bias for the NMOSFET depends on whether the front gate oxide or the buried oxide dominates the response.The mechanism to decide the worst case bias is proposed by analyzing the distribution of the electic field for that the generation of electron-hole pairs due to radiation is an electric field-dependent process