半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2000年
9期
849-852
,共4页
卢殿通%Heiner Ryssel
盧殿通%Heiner Ryssel
로전통%Heiner Ryssel
electrical properties%multiple-step%implantation
SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed with standard method and multiple-step implantation one. The Hall-effect measurements (4-300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standard SIMNI films. The DLTS results indicate that there is a deep level defect (Et=0. 152 eV) in the standard SIMNI films but no such defects in the multiple-step implanted ones. The multiple-step implanted SIMNI films have good electrical properties.
