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万方数据

半导体学报 반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2000年 1期 18-21 ,共4页

李成%杨沁清%王红杰%罗丽萍%成步文%余金中%王启明%陈涌海%王吉政

리성%양심청%왕홍걸%라려평%성보문%여금중%왕계명%진용해%왕길정

Photocurrent Measurement%SiGe%MQW%Ion Implantation%Thermal Annealing

Si-Ge interdiffusion in Si1-xGex/Si multiple quantum-wells (MQW) is investigated by photocurrent spectroscopy, which is induced by ion implantation of Si+ and thermal annealing. The band gap energy of the Si1-xGex/Si samples implanted plus annealed has a blue shift up to 97meV compared to the annealed-only samples. The blue shift may be caused by the SiGe interdiffusion and the relaxation of the SiGe quantum wells.