CAJ | 학술논문

报道了一种自对准InP/InGaAs 双异质结双极晶体管的器件性能.成功制作了U型发射极尺寸为2μm×12μm的器件,其峰值共射直流增益超过300,残余电压约为0.16V,膝点电压仅为0.6V,而击穿电压约为6V.器件的截至频率达到80GHz,最大震荡频率为40GHz.这些特性使此类器件更适合于低压、低功耗及高频方面的应用.
보도료일충자대준InP/InGaAs 쌍이질결쌍겁정체관적기건성능.성공제작료U형발사겁척촌위2μm×12μm적기건,기봉치공사직류증익초과300,잔여전압약위0.16V,슬점전압부위0.6V,이격천전압약위6V.기건적절지빈솔체도80GHz,최대진탕빈솔위40GHz.저사특성사차류기건경괄합우저압、저공모급고빈방면적응용.
We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor (DHBT) produced in China.The device has a 2μm×12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0.16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V.The HBT exhibits good microwave performance with a current gain cutoff frequency of 80GHz and a maximum oscillation frequency of 40GHz.These results indicate that this InP/InGaAs DHBT is suitable for low-voltage,low-power,and high-frequency applications.