稀有金属材料与工程
稀有金屬材料與工程
희유금속재료여공정
RARE METAL MATERIALS AND ENGINEERNG
2010年
1期
65-68
,共4页
修子扬%陈国钦%王晓峰%武高辉%邓宗权
脩子颺%陳國欽%王曉峰%武高輝%鄧宗權
수자양%진국흠%왕효봉%무고휘%산종권
Si_p/LG5%网络结构%微观结构%热膨胀系数%热导率
Si_p/LG5%網絡結構%微觀結構%熱膨脹繫數%熱導率
Si_p/LG5%망락결구%미관결구%열팽창계수%열도솔
Si_p/LG5 composite%3D network structure%microstructure%thermal expansion coefficient%thermal conductivity
采用压力浸渗技术制备Si_p/LG5复合材料并对其进行高温扩散处理.组织观察表明:复合材料增强体形貌经过高温扩散处理后由不规则的尖角形状转变为三维网络结构(3D).对3D-Si/LG5复合材料界面的研究表明,与高温扩散处理前复合材料的界面相比,三维网络结构3D-Si/LG5复合材料的界面更光滑,界面结合程度也更好.三维网络结构3D-Si/LG5复合材料界面处及基体合金内部有Si析出,基体合金中存在着孪晶;三维网络结构3D-Si/ LG5复合材料的平均线膨胀系数与高温扩散处理前相比,降低了10.5%;增强体三维网络化减少界面及基体中大量细小弥散的Si析出,使得三维网络3D-Si/ LG5复合材料的热导率变化不大.
採用壓力浸滲技術製備Si_p/LG5複閤材料併對其進行高溫擴散處理.組織觀察錶明:複閤材料增彊體形貌經過高溫擴散處理後由不規則的尖角形狀轉變為三維網絡結構(3D).對3D-Si/LG5複閤材料界麵的研究錶明,與高溫擴散處理前複閤材料的界麵相比,三維網絡結構3D-Si/LG5複閤材料的界麵更光滑,界麵結閤程度也更好.三維網絡結構3D-Si/LG5複閤材料界麵處及基體閤金內部有Si析齣,基體閤金中存在著孿晶;三維網絡結構3D-Si/ LG5複閤材料的平均線膨脹繫數與高溫擴散處理前相比,降低瞭10.5%;增彊體三維網絡化減少界麵及基體中大量細小瀰散的Si析齣,使得三維網絡3D-Si/ LG5複閤材料的熱導率變化不大.
채용압력침삼기술제비Si_p/LG5복합재료병대기진행고온확산처리.조직관찰표명:복합재료증강체형모경과고온확산처리후유불규칙적첨각형상전변위삼유망락결구(3D).대3D-Si/LG5복합재료계면적연구표명,여고온확산처리전복합재료적계면상비,삼유망락결구3D-Si/LG5복합재료적계면경광활,계면결합정도야경호.삼유망락결구3D-Si/LG5복합재료계면처급기체합금내부유Si석출,기체합금중존재착련정;삼유망락결구3D-Si/ LG5복합재료적평균선팽창계수여고온확산처리전상비,강저료10.5%;증강체삼유망락화감소계면급기체중대량세소미산적Si석출,사득삼유망락3D-Si/ LG5복합재료적열도솔변화불대.
Dense and uniform Si_p/LG5 composites were fabricated by squeeze casting process, and then were treated by high temperature diffusion. Microstructure observation indicated that Si transformed from irregular sharp-particles to 3D network structure after high temperature diffusion treatment. Si-Al interface of 3D-Si_p/LG5 composites is smoother and has better bonding degree, compared with the interface of the untreated composites. There are Si precipitation in the interface and the matrix of 3D-Si_p/LG5 composites. Twin crystals were observed in the matrix of 3D-Si_p/LG5 composites. The average linear thermal expansion (CTE) of the composites is decreased by 10.5% after high temperature diffusion treatment. However, the thermal conductivity of 3D-Si_p/LG5 composites does not change significantly due to the decreased Si precipitation in the interface and matrix by 3D network structure of Si.