CAJ | 학술논문

采用Ar+离子溅射源进行XPS和AES 剖面分析，结果发现,Ar+对MoS2分子中的S原子产生“择优”选择刻蚀并随之生成非化学计量比的MoSx，Mo原子被还原，Mo3d结合能值向低端位移约1.7 eV.应该注意的是,采用Ar+溅射进行XPS剖面分析时不能确定材料表面和界面元素的化学价态，S/Mo 原子比同实验值之间亦存在差异,故应采用有关软件对实验结果进行修正
채용Ar+리자천사원진행XPS화AES 부면분석，결과발현,Ar+대MoS2분자중적S원자산생“택우”선택각식병수지생성비화 학계량비적MoSx，Mo원자피환원，Mo3d결합능치향저단위이약1.7 eV.응해주 의적시,채용Ar+천사진행XPS부면분석시불능학정재료표면화계면원소적화학개태，S/Mo 원자비동실험치지간역존재차이,고응채용유관연건대실험결과진행수정
XPS and AES depth profiles of Mo and S in MoS2 lubricating coating made by various surface engineering techniques were obtained on PHI-5702 multi-functional X-ray photoelectron spectroscope in the presenc e of Ar+ ion-beam etching. The effect of Ar+ ion-beam etching on the chang es in the structure and chemical states of MoS2 lubricating coating was invest igated. As the results, Ar+ ion-beam etching causes preferential selective et ching of S2- in MoS2, with the generation of non-stoichiometric MoS x. At the same time, Mo4+ in MoS2 is reduced during the etching proces s, hence the binding energy of Mo3d shifts to low value. Moreover, single crystal MoS2 and MoS2 lubricating coating based on different surface treatme nt techniques show different responses to Ar+ ion-beam etching. In other word s, they give different Mo/S ratios after Ar+ ion-beam etching, because of the generation of different non-stoichiometric MoSx compounds.