半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2001年
2期
126-129
,共4页
柏劲松%方祖捷%张云妹%陈高庭%李爱珍%陈建新
柏勁鬆%方祖捷%張雲妹%陳高庭%李愛珍%陳建新
백경송%방조첩%장운매%진고정%리애진%진건신
GSMBE%中红外波段%应变量子阱激光器
GSMBE%中紅外波段%應變量子阱激光器
GSMBE%중홍외파단%응변양자정격광기
报道了GSMBE方法生长波长1.84μm的InGaAs/InGaAsP/InP应变量子阱激光器．40μm条宽、800μm腔长的平面电极条形结构器件，室温下以脉冲方式激射，20℃下阈值电流密度为3.8kA／cm2，外微分量子效率为9.3%．
報道瞭GSMBE方法生長波長1.84μm的InGaAs/InGaAsP/InP應變量子阱激光器．40μm條寬、800μm腔長的平麵電極條形結構器件，室溫下以脈遲方式激射，20℃下閾值電流密度為3.8kA／cm2，外微分量子效率為9.3%．
보도료GSMBE방법생장파장1.84μm적InGaAs/InGaAsP/InP응변양자정격광기．40μm조관、800μm강장적평면전겁조형결구기건，실온하이맥충방식격사，20℃하역치전류밀도위3.8kA／cm2，외미분양자효솔위9.3%．
GSMBE-grown 1.84 micron wavelength InGaAs/InGaAsP/InP strainedquantum well lasers are reported. Lasers with 800 micron-long cavity and 40 micron-wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3.8kA/cm2 and the external different quantum efficiency is 9.3%.
