CAJ | 학술논문

采用三电极体系恒电压电沉积法制备了Cu-In薄膜,经硒化退火生成CuInSe_2薄膜.采用循环伏安法研究了电沉积Cu-In的循环伏安特性,确定其最佳沉积电位在-0.75V左右,Cu与In的化学计量比为1.1,达到了理想前驱体的Cu与In的化学计量比.研究了不同沉积电位下材料组成、结构与性能的影响.硒化后,Cu与In的化学计量比为1,1时形成了比较单一的CuInSe_2黄铜矿相结构.
채용삼전겁체계항전압전침적법제비료Cu-In박막,경서화퇴화생성CuInSe_2박막.채용순배복안법연구료전침적Cu-In적순배복안특성,학정기최가침적전위재-0.75V좌우,Cu여In적화학계량비위1.1,체도료이상전구체적Cu여In적화학계량비.연구료불동침적전위하재료조성、결구여성능적영향.서화후,Cu여In적화학계량비위1,1시형성료비교단일적CuInSe_2황동광상결구.
Thin films of copper indium selenizate (CuInSe_2) are grown on Mo substrates by selenization of CuIn precursors are prepared by electrodeposition. Firstly the electrodeposition and of Cu-In alloy is studied by the methods of cyclic voltammetry. The results show that the optimum potentials for electrodeposition is about-0.75V(vs SCE), it is observed that the Cu/In atomic ratio is 1.1.Cu-In thin films are prepared at different deposition potentials. The influences of composition and ctructure on the propenties are investigated. After selenization, stoichiometric CIS films with a single chalcopyrite phase are synthesized from Cu-In precursors.