CAJ | 학술논문

GaP∶N绿色LED发光效率的提高有赖于对其结构参数的优化。根据载流子分布的连续性，由泊松方程自洽求解，得出了半导体n--n结势垒分布的计算方法。在此基础上，计入n-区内的电位降，计算了商用发光二极管p+-n--n结构的势垒分布，为整体结构的参数优化准备了必要的条件。
GaP∶N록색LED발광효솔적제고유뢰우대기결구삼수적우화。근거재류자분포적련속성，유박송방정자흡구해，득출료반도체n--n결세루분포적계산방법。재차기출상，계입n-구내적전위강，계산료상용발광이겁관p+-n--n결구적세루분포，위정체결구적삼수우화준비료필요적조건。
The improvement of the luminescent efficiency of GaP∶N green LEDdepends on optimization of the structural parameters. In this paper, according to the continuity of carrier profile, a method of calculating the carrier profile of a semiconductor n--n junction has been obtained, by solving the Poisson equation self-consistently. Based on this, and taking the potential drop within the n- region into account, the barrier distribution of a p+-n--n structure used in commercial light emitting diodes has been calculated, which prepared a necessary condition for optimizing the structural parameters.