CAJ | 학술논문

合作制备了体硅0.6 μm工艺直栅和环栅不同设计结构的MOS器件,开展了稳态高剂量率电离辐射总剂量效应试验.通过对实验数据进行分析,研究当器件特征尺寸达到亚微米、深亚微米时,不同设计结构、不同辐照偏置条件对实验结果的影响.分析了器件的短沟效应、窄沟效应、DIBL增强效应,为器件设计加固提供了有益的试验数据.
합작제비료체규0.6 μm공예직책화배책불동설계결구적MOS기건,개전료은태고제량솔전리복사총제량효응시험.통과대실험수거진행분석,연구당기건특정척촌체도아미미、심아미미시,불동설계결구、불동복조편치조건대실험결과적영향.분석료기건적단구효응、착구효응、DIBL증강효응,위기건설계가고제공료유익적시험수거.
Different designed structure MOS devices with stripe gate and enclosed gate were jointly fabricated in bulk silicon 0.6 μm process to carry out steady state high dose rate ionizing radiation total dose effect experiment. With the feature size of semiconductor devices scaling down to submicron and deep submicron, the effects of different designed structure and different radiation bias conditions on experimental results were studied by analyzing experimental data. Short-channel effect, narrow-channel effect, and DIBL enhancement effect was analyzed to provide useful test data to device design hardened.