CAJ | 학술논문

大功率IGBT并联运行能够承受更高的负载电流,但是大功率IGBT并联设计时需要考虑静、动态均流问题。PSpice仿真分析表明,影响静态均流的主要因素是IGBT模块的饱和导通压降和集电极、发射极引线的等值电阻;影响动态均流的主要因素涉及驱动电路、IGBT器件参数和主电路布局。提出了IGBT并联均流的措施,分析了IGBT并联电路设计的关键点,并通过仿真分析验证了所提出方法的可行性。
대공솔IGBT병련운행능구승수경고적부재전류,단시대공솔IGBT병련설계시수요고필정、동태균류문제。PSpice방진분석표명,영향정태균류적주요인소시IGBT모괴적포화도통압강화집전겁、발사겁인선적등치전조;영향동태균류적주요인소섭급구동전로、IGBT기건삼수화주전로포국。제출료IGBT병련균류적조시,분석료IGBT병련전로설계적관건점,병통과방진분석험증료소제출방법적가행성。
The higher load current can be withstood when the high-power IGBT running in parallel. But the even flow problems of static and dynamic state require consideration when designing high-power IGBT in parallel. By PSpice simulation, the main factors affecting the static even flow are found, which include saturation voltage drop, collector and emitter＇s lead equivalent resistance of IGBT module. The main factors affecting the dynamic even flow involve drive circuit, IGBT device parameters and main circuit layout. The solution of IGBT even flow in parallel is proposed. The key points of IGBT parallel circuit design are analyzed. By simulation, the feasibility of the proposed method is verified.