半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2010年
3期
256-259
,共4页
牟强%姚毅%张方辉%靳宝安%蒋谦
牟彊%姚毅%張方輝%靳寶安%蔣謙
모강%요의%장방휘%근보안%장겸
空穴注入层%2T-NATA%有机电致发光器件%发光效率%真空蒸镀
空穴註入層%2T-NATA%有機電緻髮光器件%髮光效率%真空蒸鍍
공혈주입층%2T-NATA%유궤전치발광기건%발광효솔%진공증도
hole injection layer%2T-NATA%OLED%luminescence efficiency%vacuum evaporation
为了提高有机电致发光器件OLED的发光效率,引入2T-NATA作为空穴注入层,制备了结构为ITO/2T-NATA(X am)/NPB(25 nm)/Alq_3:C545T(20 nm:质量分数4.5%)/Alq_3(30 nm)/LiF(1 nm)/Al(100 nm)的绿光器件,其中X为空穴注入层2T-NATA厚度.分析了2T-NATA的蒸镀厚度分别0,5,10,15,20,25,30,35 nm时器件的发光性能.结果表明,2T-NATA的HOMO能级较好的与ITO功函数匹配,降低了空穴注入势垒,引入空穴注入层2T-NATA提高了器件的发光亮度和效率.当2T-NATA厚度为15 nm时,器件的效果最好,起亮电压只需2.87 V,亮度最高达到18 000 cd/m~2,是不引入空穴注入层亮度的5倍多,在12 V时发光效率可达11.4 cd/A.
為瞭提高有機電緻髮光器件OLED的髮光效率,引入2T-NATA作為空穴註入層,製備瞭結構為ITO/2T-NATA(X am)/NPB(25 nm)/Alq_3:C545T(20 nm:質量分數4.5%)/Alq_3(30 nm)/LiF(1 nm)/Al(100 nm)的綠光器件,其中X為空穴註入層2T-NATA厚度.分析瞭2T-NATA的蒸鍍厚度分彆0,5,10,15,20,25,30,35 nm時器件的髮光性能.結果錶明,2T-NATA的HOMO能級較好的與ITO功函數匹配,降低瞭空穴註入勢壘,引入空穴註入層2T-NATA提高瞭器件的髮光亮度和效率.噹2T-NATA厚度為15 nm時,器件的效果最好,起亮電壓隻需2.87 V,亮度最高達到18 000 cd/m~2,是不引入空穴註入層亮度的5倍多,在12 V時髮光效率可達11.4 cd/A.
위료제고유궤전치발광기건OLED적발광효솔,인입2T-NATA작위공혈주입층,제비료결구위ITO/2T-NATA(X am)/NPB(25 nm)/Alq_3:C545T(20 nm:질량분수4.5%)/Alq_3(30 nm)/LiF(1 nm)/Al(100 nm)적록광기건,기중X위공혈주입층2T-NATA후도.분석료2T-NATA적증도후도분별0,5,10,15,20,25,30,35 nm시기건적발광성능.결과표명,2T-NATA적HOMO능급교호적여ITO공함수필배,강저료공혈주입세루,인입공혈주입층2T-NATA제고료기건적발광량도화효솔.당2T-NATA후도위15 nm시,기건적효과최호,기량전압지수2.87 V,량도최고체도18 000 cd/m~2,시불인입공혈주입층량도적5배다,재12 V시발광효솔가체11.4 cd/A.
The hole injection materials 2T-NATA was introduced into green OLED to improve the light efficiency. The green OLED was prepared with a structure of ITO/2T-NATA ( X nm) /NPB (25 nm)/ Alq_3: C545T (20 nm: mass fraction 4.5%) /Alq_3 (30 nm) /LiF (1 nm) /Al (100 nm), and the X is the thickness of hole injection layer of OLED. The thickness of 2T-NATA, ranging from 0 to 35 nm with a step of 5 nm, was systematically analyzed from the aspect of electroluminescence characteristic. The results show that 2T-NATA's HOMO level can reasonably match ITO work function, which reduces the hole-injecting barrier and improves the brightness and efficiency of devices. The maximum brightness of devices with 15 nm 2T-NATA acting as hole injection layer reached 18 000 cd/m~2 at 12 V, which is nearly 5 times than that of the device without it. What's more, luminescence efficiency reaches 11.4 cd/A at 12 V.