半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
12期
1864-1867
,共4页
刘亮%张海英%尹军舰%李潇%徐静波%宋雨竹%牛洁斌%刘训春
劉亮%張海英%尹軍艦%李瀟%徐靜波%宋雨竹%牛潔斌%劉訓春
류량%장해영%윤군함%리소%서정파%송우죽%우길빈%류훈춘
截止频率%高电子迁移率晶体管%InGaAs/InAlAs%InP
截止頻率%高電子遷移率晶體管%InGaAs/InAlAs%InP
절지빈솔%고전자천이솔정체관%InGaAs/InAlAs%InP
cutoff frequency%high electron mobility transistor%InGaAs/InAlAs%InP
报道了截止频率为218GHz的晶格匹配的In0.53Ga0.47As/In0.52Al0.48As高电子迁移率晶体管.这是迄今为止国内报道的截止频率最高的高电子迁移率晶体管.器件直流特性也很优异:跨导为980mS/mm,最大电流密度为870mA/mm.文中的材料结构和所有器件制备工艺均为本研究小组自主研制开发.
報道瞭截止頻率為218GHz的晶格匹配的In0.53Ga0.47As/In0.52Al0.48As高電子遷移率晶體管.這是迄今為止國內報道的截止頻率最高的高電子遷移率晶體管.器件直流特性也很優異:跨導為980mS/mm,最大電流密度為870mA/mm.文中的材料結構和所有器件製備工藝均為本研究小組自主研製開髮.
보도료절지빈솔위218GHz적정격필배적In0.53Ga0.47As/In0.52Al0.48As고전자천이솔정체관.저시흘금위지국내보도적절지빈솔최고적고전자천이솔정체관.기건직류특성야흔우이:과도위980mS/mm,최대전류밀도위870mA/mm.문중적재료결구화소유기건제비공예균위본연구소조자주연제개발.
Lattice-matched In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors (HEMTs) with a cutoff frequency (fT) as high as 218GHz are reported.This fT is the highest value ever reported for HEMTs in China.These devices also demonstrate excellent DC characteristics:the extrinsic transconductance is 980mS/mm and the maximum current density is 870mA/mm.The material structure and all the device fabrication technology in this work were developed by our group.
