核技术(英文版)
覈技術(英文版)
핵기술(영문판)
NUCLEAR SCIENCE AND TECHNIQUES
2002年
1期
25-30
,共6页
Phase transformation%CdS film%Annealing%Ar+ ion irradiation
CdS films prepared with chemical pyrolysis deposition (CPD) at differ-ent temperature during film growth were characterized by XRD. Hexagon-like struc-ture appeared at the temperature of 350-500℃, while wurtzite phase was observed attemperature of 540℃ during film growth. Also CdS films prepared by CPD at 400℃were undergone post annealing at different temperature of 200-600℃ or post Ar+ ionirradiation. It is found that wurtzite phase happened when the annealing temperaturerose to 600℃. And hexagon-like structure existed at the annealing temperature from25℃ to near 500℃. Ar+ ion irradiation could not cause phase transformation, butinduce some preferred orientations and an increase in grain size for the CdS filns.
