电力电子技术
電力電子技術
전력전자기술
POWER ELECTRONICS
2010年
1期
1-3,16
,共4页
张景超%赵善麒%刘利峰%王晓宝
張景超%趙善麒%劉利峰%王曉寶
장경초%조선기%류리봉%왕효보
绝缘栅双极晶体管%关键参数%结构设计%可靠性
絕緣柵雙極晶體管%關鍵參數%結構設計%可靠性
절연책쌍겁정체관%관건삼수%결구설계%가고성
insulated gate bipolar transistor%key characteristics%structure design%reliability
介绍了绝缘栅双极晶体管(IGBT)的基本结构和工作原理;讨论了IGBT各关键参数和结构设计中需要考虑的主要问题;分析了IGBT设计中需要协调的几对矛盾参数的关系以及影响IGBT可靠性的关键因素.
介紹瞭絕緣柵雙極晶體管(IGBT)的基本結構和工作原理;討論瞭IGBT各關鍵參數和結構設計中需要攷慮的主要問題;分析瞭IGBT設計中需要協調的幾對矛盾參數的關繫以及影響IGBT可靠性的關鍵因素.
개소료절연책쌍겁정체관(IGBT)적기본결구화공작원리;토론료IGBT각관건삼수화결구설계중수요고필적주요문제;분석료IGBT설계중수요협조적궤대모순삼수적관계이급영향IGBT가고성적관건인소.
The basic structure and operation mechanism of insulated gate bipolar transistor (IGBT) are introduced.The key electrical characteristics are discussed,as well as the key factors which should be considered when designing an IGBT.The trade-offs between different characters of an IGBT and the influences on its reliability are also analyzed.
