光子学报
光子學報
광자학보
ACTA PHOTONICA SINICA
2012年
2期
249-252
,共4页
李再金%曲轶%薄报学%刘国军%王立军
李再金%麯軼%薄報學%劉國軍%王立軍
리재금%곡질%박보학%류국군%왕립군
垂直腔面发射激光器%欧姆接触%合金
垂直腔麵髮射激光器%歐姆接觸%閤金
수직강면발사격광기%구모접촉%합금
VCSEL%ohmic contact%Alloying
研究了980 nm的垂直腔面发射激光器(VCSEL)欧姆接触技术.降低VCSEL的欧姆接触电阻,可有效地提高VCSEL的输出功率和延长其可靠性.P面采用高掺杂的P-GaAs/Ti/Pt/Au系统,N面采用NGaAs/Ge/Au/Ni/Au系统,通过优化合金温度,得到了最佳优化合金温度为440℃,最低欧姆接触电阻值为0.04 Q,同时对比了440℃和450℃器件的输出功率和转换效率之间的对比关系.测试结果表明,440℃器件的欧姆接触电阻0.04 Q,峰值波长980.1 nm,光谱的半高宽0.8 nm,平行发散角θ(‖)15.2°,垂直发散角θ13.5°,输出功率1.4W,转换效率最大值为14.4%,而450℃的器件欧姆接触电阻为0.049 Q,输出功率为1.3W,转换效率为12.8%.通过优化合金温度能有效地降低980 nm的VCSEL欧姆接触电阻.
研究瞭980 nm的垂直腔麵髮射激光器(VCSEL)歐姆接觸技術.降低VCSEL的歐姆接觸電阻,可有效地提高VCSEL的輸齣功率和延長其可靠性.P麵採用高摻雜的P-GaAs/Ti/Pt/Au繫統,N麵採用NGaAs/Ge/Au/Ni/Au繫統,通過優化閤金溫度,得到瞭最佳優化閤金溫度為440℃,最低歐姆接觸電阻值為0.04 Q,同時對比瞭440℃和450℃器件的輸齣功率和轉換效率之間的對比關繫.測試結果錶明,440℃器件的歐姆接觸電阻0.04 Q,峰值波長980.1 nm,光譜的半高寬0.8 nm,平行髮散角θ(‖)15.2°,垂直髮散角θ13.5°,輸齣功率1.4W,轉換效率最大值為14.4%,而450℃的器件歐姆接觸電阻為0.049 Q,輸齣功率為1.3W,轉換效率為12.8%.通過優化閤金溫度能有效地降低980 nm的VCSEL歐姆接觸電阻.
연구료980 nm적수직강면발사격광기(VCSEL)구모접촉기술.강저VCSEL적구모접촉전조,가유효지제고VCSEL적수출공솔화연장기가고성.P면채용고참잡적P-GaAs/Ti/Pt/Au계통,N면채용NGaAs/Ge/Au/Ni/Au계통,통과우화합금온도,득도료최가우화합금온도위440℃,최저구모접촉전조치위0.04 Q,동시대비료440℃화450℃기건적수출공솔화전환효솔지간적대비관계.측시결과표명,440℃기건적구모접촉전조0.04 Q,봉치파장980.1 nm,광보적반고관0.8 nm,평행발산각θ(‖)15.2°,수직발산각θ13.5°,수출공솔1.4W,전환효솔최대치위14.4%,이450℃적기건구모접촉전조위0.049 Q,수출공솔위1.3W,전환효솔위12.8%.통과우화합금온도능유효지강저980 nm적VCSEL구모접촉전조.
investigated.In order to enhance the output power of VCSEL,and extend its reliability,the contact resistance has to be reduced.Ti/Pt/Au alloy is chosen as the metal contact system for P type high doped GaAs,and Ge/Au/Ni/Au alloy is chosen as the metal contact system for N type GaAs.By chosing the optimum alloying temperature of 440 ℃,the lowest ohmic contact resistance of 0.04Ω is obtained.Comparing output power and conversion efficiency of the device for 440 ℃ and the device for 450℃,the test results show that,the ohmic contact resistance is 0.04Ω,the peak wavelength is 980.1 nm,the FWHM of spectral is 0.8 nm,the lateral divergence angle θ(‖) is as low as 15.2°,the vertical divergence angle θ(±) is as low as 13.5°,the output power is 1.4 W,the maximum conversion efficiency is 14.4% for the device of 440 ℃,while the ohmic contact resistance is 0.049 Ω,the output power is 1.3 W,the conversion efficiency is 12.8% for the device of 450 ℃.By optimizing the alloy temperature can effectively reduce ohmic contact resistance of VCSEL 980 nm.