CAJ | 학술논문

用电子束蒸发的方法在单晶硅(100)基片上制备了硼碳氮薄膜,通过椭圆偏振仪、X射线衍射仪(XRD)、X光电子能谱仪(XPS)、傅立叶红外光谱仪(FTIR),测试分析了薄膜厚度均匀性、成分与结构.结果表明,薄膜均匀性较好,薄膜的沉积速率非常慢;薄膜在衬底温度为常温下沉积已是晶态的,随着衬底温度升高到450 ℃,其结晶性逐渐增强;薄膜不是石墨与BN的混和膜而是C、B、N相互结合成键.
용전자속증발적방법재단정규(100)기편상제비료붕탄담박막,통과타원편진의、X사선연사의(XRD)、X광전자능보의(XPS)、부립협홍외광보의(FTIR),측시분석료박막후도균균성、성분여결구.결과표명,박막균균성교호,박막적침적속솔비상만;박막재츤저온도위상온하침적이시정태적,수착츤저온도승고도450 ℃,기결정성축점증강;박막불시석묵여BN적혼화막이시C、B、N상호결합성건.
In this paper, Boron carbon nitride thin films were deposited on Si (100) substrates using electron beam evaporation technology. The thickness was ascertained by Ellipsometer; meantime the films samples were characterized by X-ray diffraction(XRD)、Fourier-transformed infrared spectroscopy and X-ray photon electron spectroscopy(XPS). The result of Ellipsometer shows that the films are even and the deposition rate is slow. The results of X-ray diffraction show the film are crystal state. At the same time the results of X-ray photon electron spectroscopy (XPS) and Fourier-transformed infrared spectroscopy show the films are atomic-level hybrids composed of B, C and N atoms.