CAJ | 학술논문

对有限负压下熔体硅中磷的挥发去除进行研究.采用电子级硅配制Si-P合金,并采用GD-MS来检测实验前后硅中的磷含量.理论计算结果表明:在有限负压下,硅中的磷以P和P2的气体形式从熔体硅中挥发.实验结果显示:在温度1 873 K、真空度0.6-0.8 Pa、熔炼3600s的条件下,熔体硅中的磷从0.046%(460ppmw)下降到0.001%(10ppmw).实验结果与理论结果一致表明:当熔体硅中磷的含量大且炉腔内气压相对较高时,磷的去除与气压高度相关;而当炉腔气压很低时,磷的去除基本与气压无关.原因是在相对高磷含量的熔体硅中,磷主要以P2气体的形式挥发;在磷含量较低时,磷主要以单原子气体P的形式挥发.
대유한부압하용체규중린적휘발거제진행연구.채용전자급규배제Si-P합금,병채용GD-MS래검측실험전후규중적린함량.이론계산결과표명:재유한부압하,규중적린이P화P2적기체형식종용체규중휘발.실험결과현시:재온도1 873 K、진공도0.6-0.8 Pa、용련3600s적조건하,용체규중적린종0.046%(460ppmw)하강도0.001%(10ppmw).실험결과여이론결과일치표명:당용체규중린적함량대차로강내기압상대교고시,린적거제여기압고도상관;이당로강기압흔저시,린적거제기본여기압무관.원인시재상대고린함량적용체규중,린주요이P2기체적형식휘발;재린함량교저시,린주요이단원자기체P적형식휘발.
Elimination of phosphorus vaporizing from silicon was investigated. Si-P alloy made from electronic grade silicon was used. All the samples were analyzed by GD-MS. Theory calculation determines that phosphorus evaporates from molten silicon as gas species P and P2 at a finite reduced pressure. The experimental results show that phosphorus mass fraction can be decreased from 0.046% (460ppmw) to around 0.001% (10ppmw) under the condition of temperature 1 873 K,chamber pressure 0.6-0.8 Pa,holding time l h. Both experimental data and calculation results agree that at high phosphorus concentration,phosphorus removal is quite dependent on high chamber pressure while it becomes independent on low chamber pressure. The reason is that phosphorus evaporates from molten silicon as gas species P2 at a relatively high phosphorus concentration,while gas species P will be dominated in its vapour at low phosphorus content.