半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
5期
635-639
,共5页
黄巍%茹国平%Detavernier C%Van Meirhaeghe R L%蒋玉龙%屈新萍%李炳宗
黃巍%茹國平%Detavernier C%Van Meirhaeghe R L%蔣玉龍%屈新萍%李炳宗
황외%여국평%Detavernier C%Van Meirhaeghe R L%장옥룡%굴신평%리병종
硅化镍%镍铂硅化物%应力
硅化鎳%鎳鉑硅化物%應力
규화얼%얼박규화물%응력
NiSi%Ni1-xPtxSi%stress
利用在线应力测试技术表征了掺入Pt后对镍硅化物薄膜应力性质的影响.通过改变NiSi薄膜中Pt含量以及控制热处理的升温、降温速率实时测量了薄膜应力,发现在Si(100)衬底上生长的纯NiSi薄膜和纯PtSi薄膜的室温应力主要是热应力,且分别为775MPa和1.31GPa,而对于Ni1-xPtxSi合金硅化物薄膜,室温应力则随着Pt含量的增加而逐渐增大.应力随温度变化曲线的分析表明,Ni1-xPtxSi合金硅化物薄膜的应力驰豫温度随Pt含量的增加,从440℃(纯NiSi薄膜)升高到620℃(纯PtSi薄膜).应力驰豫温度的变化影响了最终室温时的应力值.
利用在線應力測試技術錶徵瞭摻入Pt後對鎳硅化物薄膜應力性質的影響.通過改變NiSi薄膜中Pt含量以及控製熱處理的升溫、降溫速率實時測量瞭薄膜應力,髮現在Si(100)襯底上生長的純NiSi薄膜和純PtSi薄膜的室溫應力主要是熱應力,且分彆為775MPa和1.31GPa,而對于Ni1-xPtxSi閤金硅化物薄膜,室溫應力則隨著Pt含量的增加而逐漸增大.應力隨溫度變化麯線的分析錶明,Ni1-xPtxSi閤金硅化物薄膜的應力馳豫溫度隨Pt含量的增加,從440℃(純NiSi薄膜)升高到620℃(純PtSi薄膜).應力馳豫溫度的變化影響瞭最終室溫時的應力值.
이용재선응력측시기술표정료참입Pt후대얼규화물박막응력성질적영향.통과개변NiSi박막중Pt함량이급공제열처리적승온、강온속솔실시측량료박막응력,발현재Si(100)츤저상생장적순NiSi박막화순PtSi박막적실온응력주요시열응력,차분별위775MPa화1.31GPa,이대우Ni1-xPtxSi합금규화물박막,실온응력칙수착Pt함량적증가이축점증대.응력수온도변화곡선적분석표명,Ni1-xPtxSi합금규화물박막적응력치예온도수Pt함량적증가,종440℃(순NiSi박막)승고도620℃(순PtSi박막).응력치예온도적변화영향료최종실온시적응력치.
In order to clarify the effect of Pt addition on the stress of NiSi film,in situ stress measurements were taken to evaluate the stress evolution during heating and cooling treatment of Ni1-xPtxSi alloy films with different Pt concentrations.The room temperature stress,which is mainly thermal stress,was measured to be 775MPa and 1.31GPa for pure NiSi and pure PtSi films grown on Si(100)substrates,respectively.For Ni1-xPtxSi alloy film,the room temperature stress was observed to increase steadily with Pt concentration.From the temperature dependent stress evolution curves,the stress relaxation temperature was found to increase from 440℃(for pure NiSi film)to 620℃(for pure PtSi film)with increasing Pt concentration,thus influencing the residual stress at room temperature.