半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
5期
686-691
,共6页
陈力颖%吴顺华%毛陆虹%郝先人
陳力穎%吳順華%毛陸虹%郝先人
진력영%오순화%모륙홍%학선인
RFID%无源电子标签%模拟前端%低功耗
RFID%無源電子標籤%模擬前耑%低功耗
RFID%무원전자표첨%모의전단%저공모
RFID%passive transponder%analog front end%low power
提出了一种符合ISO/IEC 18000-6B标准的高性能无源UHF RFID电子标签模拟前端,在915MHz ISM频带下工作时其电流小于8μA.该模拟前端除天线外无外接元器件,通过肖特基二极管整流器从射频电磁场接收能量.该RFID模拟前端包括本地振荡器、时钟产生电路、复位电路、匹配网络和反向散射电路、整流器、稳压器以及AM解调器等.该芯片采用支持肖特基二极管和EEPROM的Chartered 0.35μm 2P4M CMOS工艺进行流片,读取距离大于3m,芯片面积为300μm×720μm.
提齣瞭一種符閤ISO/IEC 18000-6B標準的高性能無源UHF RFID電子標籤模擬前耑,在915MHz ISM頻帶下工作時其電流小于8μA.該模擬前耑除天線外無外接元器件,通過肖特基二極管整流器從射頻電磁場接收能量.該RFID模擬前耑包括本地振盪器、時鐘產生電路、複位電路、匹配網絡和反嚮散射電路、整流器、穩壓器以及AM解調器等.該芯片採用支持肖特基二極管和EEPROM的Chartered 0.35μm 2P4M CMOS工藝進行流片,讀取距離大于3m,芯片麵積為300μm×720μm.
제출료일충부합ISO/IEC 18000-6B표준적고성능무원UHF RFID전자표첨모의전단,재915MHz ISM빈대하공작시기전류소우8μA.해모의전단제천선외무외접원기건,통과초특기이겁관정류기종사빈전자장접수능량.해RFID모의전단포괄본지진탕기、시종산생전로、복위전로、필배망락화반향산사전로、정류기、은압기이급AM해조기등.해심편채용지지초특기이겁관화EEPROM적Chartered 0.35μm 2P4M CMOS공예진행류편,독취거리대우3m,심편면적위300μm×720μm.
This paper introduces a high-performance analog front end for a passive UHF RFID transponder IC,which is compatible with the ISO/IEC 18000-6B standard,operating at the 915MHz ISM band with a total supply current consumption less than 8μA.There are no external components,except for the antenna.The passive IC's power supply is taken from the energy of the received RF electromagnetic field with the help of a Schottky diode rectifier.The RFID analog front end includes a local oscillator,clock generator,power on reset circuit,matching network and backscatter,rectifier,regulator,and AM demodulator.The IC,whose reading distance is more than 3m,is fabricated with a Chartered 0.35μm two-poly four-metal CMOS process with Schottky diodes and is EEPROM supported.The core size is 300μm×720μm.