CAJ | 학술논문

通过研究GaAs半导体材料厚度对量子效率的影响入手,提出一种利用分光光度计直接测量多层半导体厚度的新方法.根据光学干涉原理,将分光光度计测量出的反射率波谷值代入编写的JAVA程序进行计算,从而可直接得出多层半导体材料厚度,使用该方法得到的半导体层厚度误差＜9%,满足测试精度要求.此方法可用于半导体外延片材料分析、工艺提高以及批量无损测量.
통과연구GaAs반도체재료후도대양자효솔적영향입수,제출일충이용분광광도계직접측량다층반도체후도적신방법.근거광학간섭원리,장분광광도계측량출적반사솔파곡치대입편사적JAVA정서진행계산,종이가직접득출다층반도체재료후도,사용해방법득도적반도체층후도오차＜9%,만족측시정도요구.차방법가용우반도체외연편재료분석、공예제고이급비량무손측량.
This paper discussed the effect of GaAs semiconductor material thickness on the device sensitivity, and a new method for measuring the thickness of multilayer semiconductor material such as GaAs by spectrophotometer is put forward. According to the theory of wave interference, the value of wave hollow reflectivity was put into JAVA program and the thickness of multilayer semiconductor material was obtained directly. This method has many merits such as high efficiency, no damage and good repeatability. This method provides the sample semiconductor material thickness error of less than 9%, which meets the test requirement. It is an effective method for analyzing epitaxial material and improving the process of photocathode.