中国有色金属学报(英文版)
中國有色金屬學報(英文版)
중국유색금속학보(영문판)
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
2011年
1期
179-184
,共6页
杨海平%杨声海%蔡亚楠%侯国锋%夏娇云%唐谟堂
楊海平%楊聲海%蔡亞楠%侯國鋒%夏嬌雲%唐謨堂
양해평%양성해%채아남%후국봉%하교운%당모당
无水乙醇%电化学阻抗谱%极化曲线%钽%四丁基硫酸氢铵
無水乙醇%電化學阻抗譜%極化麯線%鐽%四丁基硫痠氫銨
무수을순%전화학조항보%겁화곡선%단%사정기류산경안
anhydrous ethanol%electrochemical impedance spectra%polarization curve%tantalum%tetrabutylammonium hydrogen sulfate
采用动电位极化、循环伏安、电流暂态和阻抗等技术研究钽在四丁基硫酸氢铵(TBAHS)乙醇溶液中的电化学行为.研究结果表明:循环伏安曲线中没有活化-钝化转变,阳极电流密度随溶液温度、TBAHS浓度、电位扫描速率和水含量增加而增加;表观活化能为43.389 kJ/mol,溶解过程为扩散控制.恒电位测试结果表明,当电位较低时,电流密度逐渐降至一稳定值;当电位高于某一值时,电流密度最初下降至一最小值然后逐渐增加.钝化膜电阻随电位升高而减小,当电位高于2.0 V时,出现感抗弧.
採用動電位極化、循環伏安、電流暫態和阻抗等技術研究鐽在四丁基硫痠氫銨(TBAHS)乙醇溶液中的電化學行為.研究結果錶明:循環伏安麯線中沒有活化-鈍化轉變,暘極電流密度隨溶液溫度、TBAHS濃度、電位掃描速率和水含量增加而增加;錶觀活化能為43.389 kJ/mol,溶解過程為擴散控製.恆電位測試結果錶明,噹電位較低時,電流密度逐漸降至一穩定值;噹電位高于某一值時,電流密度最初下降至一最小值然後逐漸增加.鈍化膜電阻隨電位升高而減小,噹電位高于2.0 V時,齣現感抗弧.
채용동전위겁화、순배복안、전류잠태화조항등기술연구단재사정기류산경안(TBAHS)을순용액중적전화학행위.연구결과표명:순배복안곡선중몰유활화-둔화전변,양겁전류밀도수용액온도、TBAHS농도、전위소묘속솔화수함량증가이증가;표관활화능위43.389 kJ/mol,용해과정위확산공제.항전위측시결과표명,당전위교저시,전류밀도축점강지일은정치;당전위고우모일치시,전류밀도최초하강지일최소치연후축점증가.둔화막전조수전위승고이감소,당전위고우2.0 V시,출현감항호.
The electrochemical behaviors of Ta in tetrabutylammonium hydrogen sulfate (TBAHS) ethanol solutions were studied using potentiodynamic polarization, cyclic voltammetry, potentiostatic current time transient and impedance techniques. The results revealed that no active-passive transition is presented in the cyclic voltammogram, and the anodic current density increases with the increase of solution temperature, TBAHS concentration, potential scan rate and water content. The apparent activation energy is about 43.389 kJ/mol and the dissolution process is diffusion-controlled. Potentiostatic measurements showed that the current density gradually decays to a steady value when the potential is low; however, when the potential is higher than a certain value, the current density initially declines to a minimum value and then increases gradually. The resistance of passive film decreases with increasing potential, and inductive loops are presented when the potential is higher than 2.0 V.