量子电子学报
量子電子學報
양자전자학보
CHINESE JOURNAL OF QUANTUM ELECTRONICS
2010年
2期
221-226
,共6页
谢学武%廖源%张五堂%余庆选%傅竹西
謝學武%廖源%張五堂%餘慶選%傅竹西
사학무%료원%장오당%여경선%부죽서
材料%溶胶凝胶法%ZnO薄膜%c轴择优取向%退火
材料%溶膠凝膠法%ZnO薄膜%c軸擇優取嚮%退火
재료%용효응효법%ZnO박막%c축택우취향%퇴화
materials%sol-gel technique%Zn0 thin film%c-axis oriented%annealing
利用溶胶凝胶法在石英衬底上采用旋涂法制备出ZnO薄膜,通过X射线衍射仪发现不同的退火温度对ZnO薄膜的择优取向有很大影响;通过紫外可见分光光度计和室温发光谱可以看出,制备的薄膜有很好的光学透过性和很强的紫外发光特性,而不同的退火温度对其光学性质有很大的影响.实验发现采用此种方法在650℃左右退火是一个合适的退火温度,结构特性和光学性质都相对较好;采用热分析方法可知ZnO将在375℃左右从非晶转向结晶状态,因而在常规ZnO薄膜制备方法中增加一步500℃的热处理将有助于提高ZnO薄膜的结晶质量.
利用溶膠凝膠法在石英襯底上採用鏇塗法製備齣ZnO薄膜,通過X射線衍射儀髮現不同的退火溫度對ZnO薄膜的擇優取嚮有很大影響;通過紫外可見分光光度計和室溫髮光譜可以看齣,製備的薄膜有很好的光學透過性和很彊的紫外髮光特性,而不同的退火溫度對其光學性質有很大的影響.實驗髮現採用此種方法在650℃左右退火是一箇閤適的退火溫度,結構特性和光學性質都相對較好;採用熱分析方法可知ZnO將在375℃左右從非晶轉嚮結晶狀態,因而在常規ZnO薄膜製備方法中增加一步500℃的熱處理將有助于提高ZnO薄膜的結晶質量.
이용용효응효법재석영츤저상채용선도법제비출ZnO박막,통과X사선연사의발현불동적퇴화온도대ZnO박막적택우취향유흔대영향;통과자외가견분광광도계화실온발광보가이간출,제비적박막유흔호적광학투과성화흔강적자외발광특성,이불동적퇴화온도대기광학성질유흔대적영향.실험발현채용차충방법재650℃좌우퇴화시일개합괄적퇴화온도,결구특성화광학성질도상대교호;채용열분석방법가지ZnO장재375℃좌우종비정전향결정상태,인이재상규ZnO박막제비방법중증가일보500℃적열처리장유조우제고ZnO박막적결정질량.
Zinc oxide films were deposited on fused quartz wafers using sol-gel technique and by adopting the spin-coating method. The structure of c-axis oriented ZnO films measured by X-ray diffraction is mainly decided by the post-annealing temperature. ZnO films annealed at different temperatures have a high transmittance and strong UV emission peaks which were measured by UV-VIS double-beam spectrophotometer and PL spectra. It is obvious that the annealing temperature at 650℃ is the best condition for high-quality ZnO film. The thermogravimetric analysis(TGA) of the sol was carried out, and it is found that the temperature from amorphous to more ordered state is 375℃, and crystal ZnO film is helpful to the deposition of ZnO film with high quality via the sol-gel method.