CAJ | 학술논문

研究了钒掺杂生长半绝缘6H-SiC的补偿机理.二次离子质谱分析结果表明,非故意掺杂生长的6H-SiC中,氮是主要的剩余浅施主杂质.通过较深的钒受主能级对氮施主的补偿作用,得到了具有半绝缘特性的SiC材料.借助电子顺磁共振和吸收光谱分析,发现SiC中同时存在中性钒(V4+)和受主态钒(V3+)的电荷态,表明掺入的部分杂质钒通过补偿浅施主杂质氮,形成受主态钒,这与二次离子质谱分析结果相吻合.通过对样品进行吸收光谱和低温光致发光测量,发现钒受主能级在6H-SiC中位于导带下0.62eV处.
연구료범참잡생장반절연6H-SiC적보상궤리.이차리자질보분석결과표명,비고의참잡생장적6H-SiC중,담시주요적잉여천시주잡질.통과교심적범수주능급대담시주적보상작용,득도료구유반절연특성적SiC재료.차조전자순자공진화흡수광보분석,발현SiC중동시존재중성범(V4+)화수주태범(V3+)적전하태,표명참입적부분잡질범통과보상천시주잡질담,형성수주태범,저여이차리자질보분석결과상문합.통과대양품진행흡수광보화저온광치발광측량,발현범수주능급재6H-SiC중위우도대하0.62eV처.
A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the inten-tional doping of vanadium. Because we found nitrogen to be the principal shallow donor impurity in SiC by secondary ionmass spectroscopy (SIMS) measurements,semi-insulating properties in SiC are achieved by compensating the nitrogen donor with the vanadium deep aceeptor level. The presence of different vanadium charge states V3+ and V4+ is detected by electron paramagnetie resonance and optical absorption measurements,which coincides with the results obtained by SIMS measurements. Both optical absorption and low temperature photoluminescenee measurements reveal that the vanadium acceptor level is located at 0.62eV below the conduction band in 6H-SiC.