CAJ | 학술논문

为抑制SiGe HBT基区生长过程中岛状物生成,降低位错密度,基于渐变温度控制方法和图形外延技术,结合 BiCMOS工艺,研发了在Si衬底上制备高质量Si_(1-x)Ge_x基区的外延生长方法.通过原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线双晶衍射(XRD)测试,显示所生长的Si_(1-x)Ge_x基区表面粗糙度为0.45 nm,穿透位错密度是0.3×10~3～1.2×10~3 cm~(-2),在窗口边界与基区表面未发现位错堆积与岛状物.结果表明,该方法适宜生长高质量的SiGe HBT基区,可望应用于SiGe BiCMOS工艺中HBT的制备.
위억제SiGe HBT기구생장과정중도상물생성,강저위착밀도,기우점변온도공제방법화도형외연기술,결합 BiCMOS공예,연발료재Si츤저상제비고질량Si_(1-x)Ge_x기구적외연생장방법.통과원자력현미경(AFM)、소묘전자현미경(SEM)、X사선쌍정연사(XRD)측시,현시소생장적Si_(1-x)Ge_x기구표면조조도위0.45 nm,천투위착밀도시0.3×10~3～1.2×10~3 cm~(-2),재창구변계여기구표면미발현위착퇴적여도상물.결과표명,해방법괄의생장고질량적SiGe HBT기구,가망응용우SiGe BiCMOS공예중HBT적제비.
To decrease the dislocation density and prevent Ge island from forming, a pattern epitaxial technology with gradual temperature control has been developed for fabricating SiGe HBT base layer which is compatible with BiCMOS process. The measurement results of SEM, AFM, XRD show that RMS roughness is 0.45 nm, the threading dislocation density is 0.3×10~3 cm~(-2)～1.2×10~3 cm~(-2), and dislocation accumulation and Ge island aren't found on the boundary of the windows and the surface. These indicate the process technology could grow high quality SiGe base layer and be applied to fabricate HBT in SiGe BiCMOS process.