CAJ | 학술논문

以新型BaCo_(0.05)~ⅡCo_(0.1)~ ⅢBi_(0.85)O_3材料为基体,以CuO为烧结助剂,在790、800、810 ℃烧结4 h制备了NTC厚膜电阻.借助XRD、SEM和阻温特性测试仪,研究了CuO含量对电阻相组成、微观结构及电性能的影响.结果表明:烧结温度为800 ℃的NTC厚膜电阻主要物相为具有复合立方钙钛矿结构的BaCo_(0.05)~ⅡCo_(0.1)~ ⅢBi_(0.85)O_3,并有少量Bi_2O_3剩余;该组电阻表面颗粒均匀细小,致密性随CuO含量的增加而趋于增加.对烧结温度为790 ℃的电阻来说,其室温电阻R_(25)和B_(25/85)随CuO含量的增加而逐渐降低;该电阻的R_(25)、B_(25/85)及活化能E_a分别为0.98～13.40 kΩ、931～1 855 K和0.08～0.16 eV.
이신형BaCo_(0.05)~ⅡCo_(0.1)~ ⅢBi_(0.85)O_3재료위기체,이CuO위소결조제,재790、800、810 ℃소결4 h제비료NTC후막전조.차조XRD、SEM화조온특성측시의,연구료CuO함량대전조상조성、미관결구급전성능적영향.결과표명:소결온도위800 ℃적NTC후막전조주요물상위구유복합립방개태광결구적BaCo_(0.05)~ⅡCo_(0.1)~ ⅢBi_(0.85)O_3,병유소량Bi_2O_3잉여;해조전조표면과립균균세소,치밀성수CuO함량적증가이추우증가.대소결온도위790 ℃적전조래설,기실온전조R_(25)화B_(25/85)수CuO함량적증가이축점강저;해전조적R_(25)、B_(25/85)급활화능E_a분별위0.98～13.40 kΩ、931～1 855 K화0.08～0.16 eV.
NTC thick-film thermistros were prepared after sintering at 790、800、810 ℃ for 4 h, with new BaCo_(0.05)~ⅡCo_(0.1)~ ⅢBi_(0.85)O_3 material as the substrate and CuO as the sintering aids.The effects of CuO content on the phase composition, microstructure and electrical properties of thermistors were studied by XRD, SEM and resistance-temperature detector.The results show that the major phase of thermistors sintered at 800 ℃ is BaCo_(0.05)~ⅡCo_(0.1)~ ⅢBi_(0.85)O_3 with a cubic double perovskite structure, and there is a small amount of Bi_2O_3 remained in these thermistors containing fine uniform grains; The amount of pores present in these thermistors decreases with increasing CuO content, while the compactness increases.The room temperature resistance R_(25) and the B_(25/85) of thermistors sintered at 790℃ decreases with increasing CuO content; And, the R_(25), B_(25/85) and activation energy E_a of these thermistors are in ranges of 0.98～13.4 kΩ、931～1 855 K and 0.08～0.16 eV, respectively.