CAJ | 학술논문

对于深沟槽DRAM电容这类纵向深度深(超过5μm)但是平面尺寸又很小(小于0.2μm×0.2μm)的结构来说,传统的TEM制样方法,无法满足其细微结构全面观测的需求,此外传统的方法制样也比较费时,成功率也比较低.介绍了一种"FIB横向切割"技术,适用于对这类结构的观测.它与传统FIB制样方法的主要区别在于,切割方向由纵向切割改为横向切割.用这种方法制备的TEM样品,可以完整地观测同一个深沟槽DRAM电容结构的所有细微结构.制样过程比较简单、速度快、成功率高.以一个实例分析、比较了传统制样方法和新的制样方法,突显了"FIB横向切割"技术的优点.
대우심구조DRAM전용저류종향심도심(초과5μm)단시평면척촌우흔소(소우0.2μm×0.2μm)적결구래설,전통적TEM제양방법,무법만족기세미결구전면관측적수구,차외전통적방법제양야비교비시,성공솔야비교저.개소료일충"FIB횡향절할"기술,괄용우대저류결구적관측.타여전통FIB제양방법적주요구별재우,절할방향유종향절할개위횡향절할.용저충방법제비적TEM양품,가이완정지관측동일개심구조DRAM전용결구적소유세미결구.제양과정비교간단、속도쾌、성공솔고.이일개실례분석、비교료전통제양방법화신적제양방법,돌현료"FIB횡향절할"기술적우점.
The traditional TEM sample preparation technique is hard to meet the inspection requirement of deep trench structure. A new technique named as "FIB transverse cut" for this structure was introduced. Deep trench means the structure with small size (less than 0.2 μm × 0.2μm) from top view and very deep (more than 5 μm) depth. DRAM capacitor is one of the deep trench structures. With this sample preparation technique, the thickness of ONO on the top, middle and bottom of the capacitor can be inspected on the same DRAM capacitor. This technique can also be used for the inspection of stack via and deep contact. Through the comparison between the traditional technique and the new technique, the advantages of this new technique are demonstrated.