中国有色金属学报
中國有色金屬學報
중국유색금속학보
THE CHINESE JOURNAL OF NONFERROUS METALS
2012年
5期
1156-1160
,共5页
Er3+掺杂%BaTiO3薄膜%上转换发光%溶胶-凝胶法
Er3+摻雜%BaTiO3薄膜%上轉換髮光%溶膠-凝膠法
Er3+참잡%BaTiO3박막%상전환발광%용효-응효법
Er3+ doping%BaTiO3 thin films%upconversion photoluminescence%sol-gel method
采用溶胶-凝胶法在LaNiO3/Si衬底上制备Er3+掺杂BaTiO3薄膜.通过XRD、AFM和PL图谱分别研究薄膜的晶体结构、形貌以及上转换发光性能.结果表明,薄膜的微观结构和发光性能与Er3+掺杂晶格的位置有关.A位掺杂薄膜较B位掺杂薄膜具有较小的晶格常数和较好的结晶.PL光谱表明:A位掺杂的薄膜和B位掺杂的薄膜都于528 nm和548nm处获得较强的绿色上转换发光以及在673 nm处获得较弱的红光,分别对应Er3+离子的2H11/2→4I15/2,4S3/2→4I15/2和4F9/2→4I15/2能级跃迁.相对于B位掺杂的薄膜,A位掺杂样品有较强的绿光发射积分强度以及较弱的红光发射相对强度.这种差异可以通过薄膜的结晶状况和交叉弛豫机制来进行解释.
採用溶膠-凝膠法在LaNiO3/Si襯底上製備Er3+摻雜BaTiO3薄膜.通過XRD、AFM和PL圖譜分彆研究薄膜的晶體結構、形貌以及上轉換髮光性能.結果錶明,薄膜的微觀結構和髮光性能與Er3+摻雜晶格的位置有關.A位摻雜薄膜較B位摻雜薄膜具有較小的晶格常數和較好的結晶.PL光譜錶明:A位摻雜的薄膜和B位摻雜的薄膜都于528 nm和548nm處穫得較彊的綠色上轉換髮光以及在673 nm處穫得較弱的紅光,分彆對應Er3+離子的2H11/2→4I15/2,4S3/2→4I15/2和4F9/2→4I15/2能級躍遷.相對于B位摻雜的薄膜,A位摻雜樣品有較彊的綠光髮射積分彊度以及較弱的紅光髮射相對彊度.這種差異可以通過薄膜的結晶狀況和交扠弛豫機製來進行解釋.
채용용효-응효법재LaNiO3/Si츤저상제비Er3+참잡BaTiO3박막.통과XRD、AFM화PL도보분별연구박막적정체결구、형모이급상전환발광성능.결과표명,박막적미관결구화발광성능여Er3+참잡정격적위치유관.A위참잡박막교B위참잡박막구유교소적정격상수화교호적결정.PL광보표명:A위참잡적박막화B위참잡적박막도우528 nm화548nm처획득교강적록색상전환발광이급재673 nm처획득교약적홍광,분별대응Er3+리자적2H11/2→4I15/2,4S3/2→4I15/2화4F9/2→4I15/2능급약천.상대우B위참잡적박막,A위참잡양품유교강적록광발사적분강도이급교약적홍광발사상대강도.저충차이가이통과박막적결정상황화교차이예궤제래진행해석.
Erbium-doped BaTiO3 films on LaNiO3/Si substrates were fabricated by sol-gel method.The crystalline structure,morphologies and upconversion (UC) luminescence properties of films were respectively investigated by X-ray diffraction (XRD),atomic force microcopy (AFM) and photoluminescence (PL).The results indicate that both of the microstructure and luminescence are found to be dependent on Er3+ substituting sites.The samples with A-site substitution have smaller lattice constants,larger grains and smoother surface than those with B-site substitution.The photoluminescence spectra show that both of the samples have two stronger green emission bands centered at 528 and 548 nm and a weak red emission band centered at 673 nm,which correspond to the relaxation of Er3+ from 2H11/2,4S3/2,and 4F9/2 levels to the ground level 4I15/2,respectively.Compared with B-site doped films,A-site doped films have a stronger integrated intensity of green emissions and a weaker relative intensity of red emissions.The differences could be explained by the crystalline quality and cross relaxation (CR) process.