CAJ | 학술논문

通过射频磁控溅射并控制溅射时间在玻璃基底上沉积了不同厚度和成分的p型Bi2Te3薄膜.Bi2Te3薄膜主要以(221)晶面平行于基底进行生长,先在基底形成大量微小晶粒,合并长大成典型的纤维状组织结构;退火后薄膜沿平面方向形成片状结构.薄膜的电导率和Seebeck系数受薄膜厚度和成分的影响,退火前受薄膜厚度的影响较大,退火后受薄膜成分和均匀性的影响较大,自掺杂Bi质量分数在5%左右时,薄膜功率因子约为760μW/(K2·m).
통과사빈자공천사병공제천사시간재파리기저상침적료불동후도화성분적p형Bi2Te3박막.Bi2Te3박막주요이(221)정면평행우기저진행생장,선재기저형성대량미소정립,합병장대성전형적섬유상조직결구;퇴화후박막연평면방향형성편상결구.박막적전도솔화Seebeck계수수박막후도화성분적영향,퇴화전수박막후도적영향교대,퇴화후수박막성분화균균성적영향교대,자참잡Bi질량분수재5%좌우시,박막공솔인자약위760μW/(K2·m).
p-Bi2 Te3 films in vary thickness and ingredient are fabricated on the bases of glass by RF magnetron sputtering.The structure of Bi2 Te3 films is typical fibriform which is consists of micro-grains and united grains and Bi2 Te3 films' (221) crystal face is mainly parallel to the base.Annealing treatment leads to grain growth and forms structure of sheets in-plane.The conductivity and Seebeck coefficient are influenced by the thickness and ingredient of the films.The thickness influences the conductivity and Seebeck coefficient of films of as-grown more,but the ingredient and uniformilty influences the conductivity and Seebeck coefficient of annealed films more.The thermoectric power acquired is 760μW/(K2·m)in annealed Bi2 Te3 films when the self-doped Bi is about 5%.