CAJ | 학술논문

对电阻率为103～6Ω·cm的In掺杂Cd0.9Zn0.1Te晶片在Te气氛和Cd/Zn平衡蒸汽压下进行了热处理,对电阻率为108～9Ω·cm的非掺杂晶片则在In气氛和Cd/Zn平衡蒸汽压下进行了热处理.结果表明,In掺杂Cd0.9Zn0.1Te晶片经处理后电阻率可提高3个数量级.非掺杂晶片在In气氛中热处理可很容易地改变导电类型,在热处理温度700℃,In分压6.1×10-4 Pa,退火时间达48 h后,电阻率可以提高到2.6×109Ω·cm.
대전조솔위103～6Ω·cm적In참잡Cd0.9Zn0.1Te정편재Te기분화Cd/Zn평형증기압하진행료열처리,대전조솔위108～9Ω·cm적비참잡정편칙재In기분화Cd/Zn평형증기압하진행료열처리.결과표명,In참잡Cd0.9Zn0.1Te정편경처리후전조솔가제고3개수량급.비참잡정편재In기분중열처리가흔용역지개변도전류형,재열처리온도700℃,In분압6.1×10-4 Pa,퇴화시간체48 h후,전조솔가이제고도2.6×109Ω·cm.
The as-grown In-doped Cd0.9Zn0.1Te wafers of ρ about 103～6 Ω·cm were annealed in Te atmosphere under Cd/Zn equilibrium pressures and the as-grown non-doped Cd0.9Zn0.1Te wafers of ρ about 108～9 Ω·cm were annealed under In+Cd/Zn equilibrium pressures. The results show that for the In-doped annealed wafer, the resistivity could be raised by three orders.And it is found that the conductivity type of the non-doped CZT wafers could be changed easily during the In vapor phase annealing process, and the resistivity of the wafer could be raised up to 2.6 × 109 Ω·cm when it was annealed at 700℃ under the In pressure of 6.1 × 10-4 Pa for 48 h.