人工晶体学报
人工晶體學報
인공정체학보
2001年
2期
192-197
,共6页
陈京兰%孟丽琴%赵德乾%高书侠%杜江%吴光恒
陳京蘭%孟麗琴%趙德乾%高書俠%杜江%吳光恆
진경란%맹려금%조덕건%고서협%두강%오광항
Tb2Fe17%Tb2(Fe,Si)17%提拉法单晶生长%相图%磁性测量
Tb2Fe17%Tb2(Fe,Si)17%提拉法單晶生長%相圖%磁性測量
Tb2Fe17%Tb2(Fe,Si)17%제랍법단정생장%상도%자성측량
利用磁悬浮冷坩埚提拉法技术生长了Tb2Fe17和Tb2(Fe,Si)17的单晶,并用差热分析等方法研究了材料的相图。研究结果表明:Tb2Fe17的相关系并非以往报道的包晶反应,而是同成分熔化。本文还给出了Tb2Fe17化合物附近的新相图。采用优化后的生长条件,获得了缺陷较少的Tb2Fe17和Tb2(Fe,Si)17高质量单晶。分析了Si替代对于化合物结构的影响。测量了Tb2Fe17单晶样品的基本磁性。从材料的一级磁化过程的测量可以看出,在理想配比条件下最容易获得缺陷密度低的单晶样品。这种磁性测量方法为了解单晶的完整性提供了一个有效的间接观察方法。
利用磁懸浮冷坩堝提拉法技術生長瞭Tb2Fe17和Tb2(Fe,Si)17的單晶,併用差熱分析等方法研究瞭材料的相圖。研究結果錶明:Tb2Fe17的相關繫併非以往報道的包晶反應,而是同成分鎔化。本文還給齣瞭Tb2Fe17化閤物附近的新相圖。採用優化後的生長條件,穫得瞭缺陷較少的Tb2Fe17和Tb2(Fe,Si)17高質量單晶。分析瞭Si替代對于化閤物結構的影響。測量瞭Tb2Fe17單晶樣品的基本磁性。從材料的一級磁化過程的測量可以看齣,在理想配比條件下最容易穫得缺陷密度低的單晶樣品。這種磁性測量方法為瞭解單晶的完整性提供瞭一箇有效的間接觀察方法。
이용자현부랭감과제랍법기술생장료Tb2Fe17화Tb2(Fe,Si)17적단정,병용차열분석등방법연구료재료적상도。연구결과표명:Tb2Fe17적상관계병비이왕보도적포정반응,이시동성분용화。본문환급출료Tb2Fe17화합물부근적신상도。채용우화후적생장조건,획득료결함교소적Tb2Fe17화Tb2(Fe,Si)17고질량단정。분석료Si체대대우화합물결구적영향。측량료Tb2Fe17단정양품적기본자성。종재료적일급자화과정적측량가이간출,재이상배비조건하최용역획득결함밀도저적단정양품。저충자성측량방법위료해단정적완정성제공료일개유효적간접관찰방법。
Single crystals of rare-earth intermetallic compound of Tb2Fe17 and Tb2(Fe,Si)17 have been grown by CZ method with cold crucible.The phase diagram around Tb2Fe17 has been investigated by various examination methods.It has been found that the phase relation on Tb2Fe17 is not the peritectic,as reported in previous works.A new phase diagram on this compound has been given based on the experimental results,which indicates that the real phase relation on this compound is congruent solidification.This phase relation provides a good intrinsic condition for growing high quality crystal.The X-ray diffraction reveals that the structure of Tb2(Fe,Si)17 become a mixture of Th2Ni17 and Th2Zn17,when the x value is larger than 3.0.The magnetization and the first order magnetization process(FOMP)of the single crystalline samples have been measured,The results indicate that the high quality crystals could be grown from the starting material with stoichiometric composition.Therefore,the magnetic measurement used in the present work will be an effective method for determining the quality of grown single crystals.