中国有色金属学会会刊(英文版)
中國有色金屬學會會刊(英文版)
중국유색금속학회회간(영문판)
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
2002年
4期
686-690
,共5页
傅晓伟%杨王玥%孙祖庆%张来启%朱静
傅曉偉%楊王玥%孫祖慶%張來啟%硃靜
부효위%양왕모%손조경%장래계%주정
SiC/MoSi2 composite%in-situ synthesis%creep%dislocation
The compressive creep behavior at 1200～1400℃ of an in-situ synt hesized MoSi2-30%SiC (volume fraction) composite and a traditional PM MoSi2 -30%SiC (volume fraction) composite is investigated. The creep rate of the in -situ synthesized MoSi2-30%SiC (volume fraction) composite is about 10- 7s-1 under stress of 60～120MPa, and significantly lower than that made by PM method above 1300℃. The reason is that the interface be tween SiC particle and MoSi2 matrix in in-situ synthesized SiCp/MoSi2 is of direct atomic bonding without any amorphous glassy phase, such as SiO2 stru cture. Creep deformation occurs primarily by dislocation motion and the dislocat ions have Burgers vectors of the ty pe of 〈110〉 and 〈100〉.
