CAJ | 학술논문

随着尺寸的进一步微型化和载荷严酷化,集成电路（integrated circuit,IC）封装焊点中的原子迁移失效问题越来越突出。由于材料热性能和电阻率的差异而造成的温差是封装焊点所要面对的主要问题之一。针对铜柱形凸点这种新型倒装芯片互连形式,通过热动力学理论和黏塑性力学分析,运用有限元方法研究了热场和力场耦合作用下柱形铜凸点的热迁移和应力迁移现象。通过分析温度载荷模型下影响原子迁移的多个因素,提取了温度梯度和应力分布等关键参数,进而得到热力耦合场作用下原子迁移的失效机制和发生条件。所建立的失效模型有助于促进IC封装方面原子迁移的可靠性改善工作。
수착척촌적진일보미형화화재하엄혹화,집성전로（integrated circuit,IC）봉장한점중적원자천이실효문제월래월돌출。유우재료열성능화전조솔적차이이조성적온차시봉장한점소요면대적주요문제지일。침대동주형철점저충신형도장심편호련형식,통과열동역학이론화점소성역학분석,운용유한원방법연구료열장화력장우합작용하주형동철점적열천이화응력천이현상。통과분석온도재하모형하영향원자천이적다개인소,제취료온도제도화응력분포등관건삼수,진이득도열력우합장작용하원자천이적실효궤제화발생조건。소건립적실효모형유조우촉진IC봉장방면원자천이적가고성개선공작。
With further miniaturization and harsh service loading,the failure problems of atomic migration for solder joints become more dominative in integrated circuit（IC） packaging.The temperature difference caused by thermal properties and electrical resistivity among different materials is a vital factor for IC package solder joints.In consideration of such a new lip-chip interconnect form as a Cu-pillar bump,thermo-migration and stress-migration of Cu-pillar bumps in thermomechanical coupling fields were investigated via the kinetic theory and viscoplastic mechanical analysis by means of finite element method.Informed of influencing factors of atomic migration,we obtained such parameters as temperature gradient and stress distribution in a specific model under temperature load,and then concluded the failure mechanism and occurrence conditions of atomic migration in multi-field coupling.The established failure models of atomic migration in the paper are expected to help improving the reliability in IC packaging.