CAJ | 학술논문

采用射频(radio frequency,RF,13.56 MHz)和直流偏压双重激励源,在等离子增强化学气相沉积(plasma-enhanced chemical vapor deposition,PECVD)系统下制备了康宁玻璃7059衬底上的氢化纳米硅薄膜.保持射频功率、反应室气压、直流偏压值和衬底温度等工艺参数不变的情况下,主要改变硅烷稀释度(silane concentration,SC)从1%到0.5%.当SC减小时,薄膜的晶态比Xc反而出现了增大现象,表明较低的Sc有利于薄膜结构中晶态成分的形成.当SC减小到0.5%时,Xc则出现最大值54.2%.文中具有不同薄膜晶态比的样品力学性能采用美国Hysitron公司的Tribolndenter纳米压痕系统进行测量,薄膜的杨氏模量和硬度值利用Oliver和Pharr的解析方法得出.结果表明:当薄膜的Xc从50.5%增大到54.2%时,薄膜的杨氏模量和硬度值都大大增加,这种现象的产生是由于不同Xc的薄膜具有不同的晶态微结构,因此薄膜的Xc值在很大程度上决定薄膜的力学性能.
채용사빈(radio frequency,RF,13.56 MHz)화직류편압쌍중격려원,재등리자증강화학기상침적(plasma-enhanced chemical vapor deposition,PECVD)계통하제비료강저파리7059츤저상적경화납미규박막.보지사빈공솔、반응실기압、직류편압치화츤저온도등공예삼수불변적정황하,주요개변규완희석도(silane concentration,SC)종1%도0.5%.당SC감소시,박막적정태비Xc반이출현료증대현상,표명교저적Sc유리우박막결구중정태성분적형성.당SC감소도0.5%시,Xc칙출현최대치54.2%.문중구유불동박막정태비적양품역학성능채용미국Hysitron공사적Tribolndenter납미압흔계통진행측량,박막적양씨모량화경도치이용Oliver화Pharr적해석방법득출.결과표명:당박막적Xc종50.5%증대도54.2%시,박막적양씨모량화경도치도대대증가,저충현상적산생시유우불동Xc적박막구유불동적정태미결구,인차박막적Xc치재흔대정도상결정박막적역학성능.
Nanocrystalline hydrogenated silicon (nc-Si : H) films were prepared on Coming 7059 glass by plasmaenhanced chemical vapor deposition (PECVD) technique with radio frequency (RF) (13.56 MHz) and DC bias stimulation. In this paper, we mainly changed the silane concentration (SC) from 1% to 0.5%, while RF power, the chamber pressure, DC bias and the substrate temperature were kept constant. With the SC decreasing, the crystalline volume fraction Xc of the films increased, which showed that lower SC was inclined to the formation of crystallites in the film structures. When SC was 0.5%, Xc reached 54.2% which was the maximum value in these samples. Moreover, the mechanical properties of samples with different Xc were gained by TriboIndenter nano system of Hysitron company in the USA. The Young's modulus and hardness of films were assessed by means of the Oliver and Pharr analysis method. The result shows that Xc has dramatic effect on the mechanical properties of films. When Xc of films was raised from 50.5% % to 54.2%, the Young's modulus and hardness of films increased sharply, which can be explained by the change of microstructures of thin films with different Xc.