电子学报
電子學報
전자학보
ACTA ELECTRONICA SINICA
2009年
11期
2476-2479
,共4页
量子点%剩余应变%边带能%有限元法
量子點%剩餘應變%邊帶能%有限元法
양자점%잉여응변%변대능%유한원법
quantum dot%residual strain%energy level shifts%finite element method
从弹性力学的理论出发,导出了应变对量子点各边带能级影响改变量的表达式,以有限元法计算了量子点的应变;结合应变能改变量表达式给出了应变作用下各边带能改变量的变化曲线,指出应变使量子点导带级平行移动,且移动的数值只与材料的性质有关;应变作用下重空穴带和轻空穴带发生分裂,分裂的大小与材料的性质和量子点的形状都有关.
從彈性力學的理論齣髮,導齣瞭應變對量子點各邊帶能級影響改變量的錶達式,以有限元法計算瞭量子點的應變;結閤應變能改變量錶達式給齣瞭應變作用下各邊帶能改變量的變化麯線,指齣應變使量子點導帶級平行移動,且移動的數值隻與材料的性質有關;應變作用下重空穴帶和輕空穴帶髮生分裂,分裂的大小與材料的性質和量子點的形狀都有關.
종탄성역학적이론출발,도출료응변대양자점각변대능급영향개변량적표체식,이유한원법계산료양자점적응변;결합응변능개변량표체식급출료응변작용하각변대능개변량적변화곡선,지출응변사양자점도대급평행이동,차이동적수치지여재료적성질유관;응변작용하중공혈대화경공혈대발생분렬,분렬적대소여재료적성질화양자점적형상도유관.
It is derived from elastic theory that the expressions of shifts of the energy levels in semiconductor quantum dots. The strains of the semiconductor quantum dots are calculated by finite element method. By combing the two results, the variation of all energy levels in strain quantum dot are educed. It is pointed that the conductor band will be decreased (or risen). The shift of the decreased (or risen) is decided by material of the quantum. The heavy hole band and the light hole band are split - off in stain quantum dot. The shifts are decided by the material and the shape of the quantum dot.