环境科学学报（英文版）
環境科學學報（英文版）
배경과학학보（영문판）
JOURNAL OF ENVIRONMENTAL SCIENCES
2005年
1期
146-151
,共6页
MOCVD%photocatalystic degradation%Silicon(100)%Silicon( 111 )
Silicon(111) and Silicon(100) were employed for fabrication of TiO2 films by metal organic chemical vapor deposition(MOCVD).Titanium(Ⅳ) isopropoxide(Ti[O(C3H7)4]) was used as a precursor. The as-deposited TiO2 films were characterized with FE-SEM, XRD and AFM. The photocatalytic properties were investigated by decomposition of aqueous Orange Ⅱ. And UV-VIS photospectrometer was used for checking the absorption characteristics and photocatalytic degradation activity. The crystalline and structural properties of TiO2 film had crucial influences on the photodegradation efficiency. For MOCVD in-situ deposited films on Si substrates, the photoactivities varied following a shape of "M": at lower(350℃), middle(500℃) and higher(800℃) temperature of deposition, relative lower photodegradation activities were observed. At 400℃ and 700℃ of deposition, relative higher efficiencies of degradation were obtained, because one predominant crystallite orientation could be obtained as deposition at the temperature of two levels, especially a single anatase crystalline TiO2 film could be obtained at 700℃.
