CAJ | 학술논문

利用脉冲激光沉积的方法在Si衬底上生长出了c轴高度取向的Mn掺杂ZnO薄膜.X射线衍射表明所有样品都具有纤锌矿结构,没有发现其它相,随着掺杂量的增加,c轴晶格常数增大.原子力显微镜结果显示:Mn的掺杂引起了ZnO薄膜表面粗糙度的变化.由光致发光谱发现,在387 nm附近出现了由于近带边自由激子复合引起的紫外峰,还有以430和545 nm为中心的较宽发光峰,结果表明:掺入到ZnO薄膜中的Mn以+2价的价态存在,掺Mn以后的ZnO薄膜带隙变大,缺陷能级也发生了改变,在发光谱中表现为紫外峰的蓝移,可见光部分430 nm和545 nm位置处发光峰的红移.
이용맥충격광침적적방법재Si츤저상생장출료c축고도취향적Mn참잡ZnO박막.X사선연사표명소유양품도구유섬자광결구,몰유발현기타상,수착참잡량적증가,c축정격상수증대.원자력현미경결과현시:Mn적참잡인기료ZnO박막표면조조도적변화.유광치발광보발현,재387 nm부근출현료유우근대변자유격자복합인기적자외봉,환유이430화545 nm위중심적교관발광봉,결과표명:참입도ZnO박막중적Mn이+2개적개태존재,참Mn이후적ZnO박막대극변대,결함능급야발생료개변,재발광보중표현위자외봉적람이,가견광부분430 nm화545 nm위치처발광봉적홍이.
Zn1-x MnxO thin films were successfully grown on Si (111) substrates by pulsed laser deposition (PLD).X-ray diffraction measurement revealed that all the films were single phase and had wurtzite structure with c-axis orientation.As Mn concentration increased in Zn1-x MnxO films,the c-axis lattice constant increased gradually.Atomic Force Microscopy (AFM) showed that surface roughness and morphology changed with doping concentrations.Photoluminescence spectra of Zn1-xMnxO thin films were also studied which shows a narrow UV band at 387 nm,a broad blue band of 430 nm and another broad peak at 545 nm.It was deduced that Mn doping leads to a blue shift of the UV band,and a red shift of 430 nm and 545 nm.