CAJ | 학술논문

以石英陀螺的微结构为研究对象,对石英的湿法腐蚀规律进行研究.选用500 μn厚Z切向石英片,蒸镀10 nm厚Cr膜和200 nm厚金膜作为掩模层,选用40%氢氟酸和40%氟化铵的1:1混合溶液作为腐蚀液.通过在不同温度下的腐蚀试验,表明腐蚀速率随温度增加而增大,温度过低腐蚀过慢影响腐蚀效率,温度过高使石英侧壁表面粗糙度增加.经过试验摸索,在70℃下腐蚀,可获得表面质量较好的石英微结构.石英在湿法腐蚀中结构侧壁会产生两级晶棱,根据侧壁主要晶面的腐蚀速率,计算出修平侧壁两级晶棱所需时间分别为8h和27h,经过试验验证,在预计时间内,石英侧壁晶棱基本修平.
이석영타라적미결구위연구대상,대석영적습법부식규률진행연구.선용500 μn후Z절향석영편,증도10 nm후Cr막화200 nm후금막작위엄모층,선용40%경불산화40%불화안적1:1혼합용액작위부식액.통과재불동온도하적부식시험,표명부식속솔수온도증가이증대,온도과저부식과만영향부식효솔,온도과고사석영측벽표면조조도증가.경과시험모색,재70℃하부식,가획득표면질량교호적석영미결구.석영재습법부식중결구측벽회산생량급정릉,근거측벽주요정면적부식속솔,계산출수평측벽량급정릉소수시간분별위8h화27h,경과시험험증,재예계시간내,석영측벽정릉기본수평.
Quartz gyroscope' microstructure is etched to study the quartz etching laws. A 500 μm Z-cut quartz wafer is selected. 10 nm thickness Cr and 200 nm thickness Au films are deposited as the etch mask.The mixture of 40% HF and 40% NH_4F(1:1) at 70℃ is used as the quartz etchant. Wet etching experiments are carried out at different temperatures. Etch rate increases while the temperature increases. Low temperature reduces etching efficiency and high temperature makes the roughness on the sidewall surface increase. There are two steps of arrises on the center of the quartz sidewall in wet etching process. The time for which the two arrises were flatted is worked out 8h for the one and 27h for the other according to the etch rate of the quartz sidewall surface. The etching experiments show that the arrises on quartz sidewall are basically flatted within the budgetary time.