CAJ | 학술논문

利用掺锡氧化铟(ITO)靶和Ta_2O_5靶双靶共溅法制备了氧化铟锡钽(ITTO)薄膜,研究了在不同衬底温度和退火温度下ITTO薄膜的微结构和光电性能.ITTO薄膜具有更好的晶化程度和较低的表面粗糙度,不同的处理过程导致了晶面择优取向的转变.室温下制备的ITTO薄膜展示了较好的光电性能,提高衬底温度和合理的退火处理可以显著地提高薄膜的光电特性.载流子浓度对于近红外反射、近紫外吸收和光学禁带宽度具有重要的影响.ITTO薄膜具有较宽的光学禁带宽度.在优化制备条件下,可以获得方阻10～20Ω/□、可见光透过率大于85%以及光学禁带宽度大于4.0eV的ITTO薄膜.
이용참석양화인(ITO)파화Ta_2O_5파쌍파공천법제비료양화인석단(ITTO)박막,연구료재불동츤저온도화퇴화온도하ITTO박막적미결구화광전성능.ITTO박막구유경호적정화정도화교저적표면조조도,불동적처리과정도치료정면택우취향적전변.실온하제비적ITTO박막전시료교호적광전성능,제고츤저온도화합리적퇴화처리가이현저지제고박막적광전특성.재류자농도대우근홍외반사、근자외흡수화광학금대관도구유중요적영향.ITTO박막구유교관적광학금대관도.재우화제비조건하,가이획득방조10～20Ω/□、가견광투과솔대우85%이급광학금대관도대우4.0eV적ITTO박막.
The indium-tin-tantalum oxides (ITTO) films were deposited by reactive magnetron co-sputtering of the indium tin oxides (ITO) and Ta_2O_5 targets on glass substrates.The impacts of the film growth conditions,including the substrate temperature and annealing temperature,on the film properties were studied.The microstructures and electrical-optical properties of the ITTO films were characterized with X-ray diffraction,atomic force microscopy and conventional optical probes.The results show that the doping of tantalum oxide significantly affects the electrical and optical properties of the ITO films.For instance,the ITTO films have wider optical band gap (4.0eV),lower sheet resistance (10～20Ω/□),larger transmittance (＞85%),and higher thermal stability than those of the conventional ITO films.Possible mechanisms were also tentatively discussed.