CAJ | 학술논문

用Thomas Swan公司的MOCVD系统在蓝宝石(0001)面上生长了高质量的GaN薄膜.采用多种化学腐蚀方法,如熔融KOH,H3PO4与H2SO4混合酸和HCl气相腐蚀法,利用SEM及TEM技术对GaN薄膜中的位错进行了研究.SEM显示在GaN薄膜相同位置处,不同腐蚀法所得的腐蚀坑的形态和密度有明显差别.结果表明HCl气相腐蚀可以显示纯螺位错、纯刃位错和混合位错;H3PO4与H2SO4混合酸腐蚀可以显示纯螺位错和混合位错;而熔融KOH腐蚀仅能显示纯螺位错.
용Thomas Swan공사적MOCVD계통재람보석(0001)면상생장료고질량적GaN박막.채용다충화학부식방법,여용융KOH,H3PO4여H2SO4혼합산화HCl기상부식법,이용SEM급TEM기술대GaN박막중적위착진행료연구.SEM현시재GaN박막상동위치처,불동부식법소득적부식갱적형태화밀도유명현차별.결과표명HCl기상부식가이현시순라위착、순인위착화혼합위착;H3PO4여H2SO4혼합산부식가이현시순라위착화혼합위착;이용융KOH부식부능현시순라위착.
High quality GaN films on (0001) sapphire substrates were grown by a commercial MOCVD system (Thomas Swan Corp.).The etch pits and threading dislocations(TDs) in GaN films have been studied by chemical etching methods such as mixed acid solution (H3PO4∶H2SO4=1∶3) and molten KOH,HCl vapor etching method,scanning electron microscope (SEM) and transmission electron microscope(TEM).SEM images of the same position of GaN films with HCl vapor etching and wet etching methods show notably different densities and shapes of etching pits.The results indicate that HCl vapor etching can show pure edge,pure screw and mixed TDs,mixed acid solution can show pure screw and mixed TDs and molten KOH wet etching only can show pure screw TDs.