CAJ | 학술논문

使用热丝化学气相沉积技术制备微晶硅薄膜(沉积速度为1.2nm/s),通过原子力显微镜研究了薄膜前期生长的粗糙化过程.按照标度理论获得微晶硅薄膜的生长因子为β≈O.67,粗糙度因子为α≈O.80,动力学因子为1/z=0.40.这些标度指数不能用一般的生长模型来解释.通过蒙特卡罗模拟给出与实验一致的结果.模拟表明,入射流方向、生长基元的类型和浓度、生长基元的粘滞、再发射和影蔽过程都对微晶硅薄膜的表面形貌有比较重要的影响.
사용열사화학기상침적기술제비미정규박막(침적속도위1.2nm/s),통과원자력현미경연구료박막전기생장적조조화과정.안조표도이론획득미정규박막적생장인자위β≈O.67,조조도인자위α≈O.80,동역학인자위1/z=0.40.저사표도지수불능용일반적생장모형래해석.통과몽특잡라모의급출여실험일치적결과.모의표명,입사류방향、생장기원적류형화농도、생장기원적점체、재발사화영폐과정도대미정규박막적표면형모유비교중요적영향.
Hydrogenated microcrystalline silicon(μc-Si:H)films with a high deposition rate of 1.2nm/s were prepared by hot-wire chemical vapor deposition (HWCVD).The growth-front roughening processes of the μc-Si:H films were investi-gated by atomic force microscopy.According to the scaling theory,the growth exponent β≈0.67,the roughness exponent α≈O.80.and the dynamic exponent 1/z=0.40 are obtained.These scaling exponents cannot be explained well by the known growth models.An attempt at Monte Carlo simulation has been made to describe the growth process of μc-Si:H film using a particle reemission model where the incident flux distribution,the type and concentration of growth radical,and sticking,reemission,shadowing mechanisms all contributed to the growing morphology.