CAJ | 학술논문

为了提高SIMOX(separation-by-implanted-oxygen)SOI(silicon-on-insulator)结构中埋氧层(BOX)的总剂量辐射硬度,埋氧层中分别注入了2×1015和3×1015cm-2剂量的氮.实验结果表明,在使用Co-60源对埋氧层进行较低总剂量的辐照时,埋氧层的总剂量辐射硬度对注氮剂量是非常敏感的.尽管埋氧层中注氮剂量的差别很小,但经5×104 rad(Si)剂量的辐照后,注入2×1015cm-2剂量氮的埋氧层表现出了比未注氮埋氧层高得多的辐射硬度,而注入3×1015cm-2剂量氮的埋氧层的辐射硬度却比未注氮埋氧层的辐射硬度还低.然而,随辐照剂量的增加(从5×104到5×105rad(Si)),这种埋氧层的总剂量辐射硬度对注氮剂量的敏感性降低了.采用去掉SOI顶硅层的MOS高频C-V技术来表征埋氧层的总剂量辐射硬度.另外,观察到了MSOS(metal-silicon-BOX-silicon)结构的异常高频C-V曲线,并对其进行了解释.
위료제고SIMOX(separation-by-implanted-oxygen)SOI(silicon-on-insulator)결구중매양층(BOX)적총제량복사경도,매양층중분별주입료2×1015화3×1015cm-2제량적담.실험결과표명,재사용Co-60원대매양층진행교저총제량적복조시,매양층적총제량복사경도대주담제량시비상민감적.진관매양층중주담제량적차별흔소,단경5×104 rad(Si)제량적복조후,주입2×1015cm-2제량담적매양층표현출료비미주담매양층고득다적복사경도,이주입3×1015cm-2제량담적매양층적복사경도각비미주담매양층적복사경도환저.연이,수복조제량적증가(종5×104도5×105rad(Si)),저충매양층적총제량복사경도대주담제량적민감성강저료.채용거도SOI정규층적MOS고빈C-V기술래표정매양층적총제량복사경도.령외,관찰도료MSOS(metal-silicon-BOX-silicon)결구적이상고빈C-V곡선,병대기진행료해석.
In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.