CAJ | 학술논문

报道了具有基极微空气桥和发射极空气桥结构的InP单异质结双极型晶体管(SHBT).由于基极微空气桥和发射极空气桥结构有效地减小了寄生,发射极尺寸为2 μm×12.5 μm的InP HBT的截止频率达到了178GHz.这种器件对高速低功耗的应用非常关键,例如OEIC接收机以及模拟、数字转换器.
보도료구유기겁미공기교화발사겁공기교결구적InP단이질결쌍겁형정체관(SHBT).유우기겁미공기교화발사겁공기교결구유효지감소료기생,발사겁척촌위2 μm×12.5 μm적InP HBT적절지빈솔체도료178GHz.저충기건대고속저공모적응용비상관건,례여OEIC접수궤이급모의、수자전환기.
An InP-based single-heterojunction bipolar transistor (SHBT) with base μ-bridge and emitter air-bridge is reported. Because those bridges reduce parasitic capacitance greatly, the cutoff frequency fT of the 2 μm ×12.5 μm InP SHBT without de-embedding reaches 178GHz. It is critical in high-speed low power applications,such as OEIC receivers and analog-to-digital converters.