半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
6期
1040-1043
,共4页
曹寒梅%杨银堂%蔡伟%陆铁军%王宗民
曹寒梅%楊銀堂%蔡偉%陸鐵軍%王宗民
조한매%양은당%채위%륙철군%왕종민
低失真%高速%多路选择器%模拟开关
低失真%高速%多路選擇器%模擬開關
저실진%고속%다로선택기%모의개관
low-distortion%high speed%multiplexer%analog switch
提出了一种能够传输高速信号的多路选择器,并为其设计了一种低失真、宽带模拟开关.所提出开关的栅源过驱动电压由nMOS和pMOS的开启电压之和决定,并能够确保输入变化时,开关的栅源电压与阈值电压之差(VGST)保持恒定,从而基本消除了体效应的影响.采用TSMC 0.18μm CMOS工艺,HSPICE仿真结果表明,输入信号在0.3~1.7V之间变化时,开关的VGST基本保持恒定,其-3dB带宽大于10GHz,当输入频率为1GHz时,其无杂散动态范围为67.11dB;开关的开启时间为2.98ns,关断时间为1.35ns,确保了多路选择器的break-before-make特性.该结构可应用于高速信号传输系统中.
提齣瞭一種能夠傳輸高速信號的多路選擇器,併為其設計瞭一種低失真、寬帶模擬開關.所提齣開關的柵源過驅動電壓由nMOS和pMOS的開啟電壓之和決定,併能夠確保輸入變化時,開關的柵源電壓與閾值電壓之差(VGST)保持恆定,從而基本消除瞭體效應的影響.採用TSMC 0.18μm CMOS工藝,HSPICE倣真結果錶明,輸入信號在0.3~1.7V之間變化時,開關的VGST基本保持恆定,其-3dB帶寬大于10GHz,噹輸入頻率為1GHz時,其無雜散動態範圍為67.11dB;開關的開啟時間為2.98ns,關斷時間為1.35ns,確保瞭多路選擇器的break-before-make特性.該結構可應用于高速信號傳輸繫統中.
제출료일충능구전수고속신호적다로선택기,병위기설계료일충저실진、관대모의개관.소제출개관적책원과구동전압유nMOS화pMOS적개계전압지화결정,병능구학보수입변화시,개관적책원전압여역치전압지차(VGST)보지항정,종이기본소제료체효응적영향.채용TSMC 0.18μm CMOS공예,HSPICE방진결과표명,수입신호재0.3~1.7V지간변화시,개관적VGST기본보지항정,기-3dB대관대우10GHz,당수입빈솔위1GHz시,기무잡산동태범위위67.11dB;개관적개계시간위2.98ns,관단시간위1.35ns,학보료다로선택기적break-before-make특성.해결구가응용우고속신호전수계통중.
A multiplexer with a low-distortion high-bandwidth analog switch is presented. The gate-to-source voltage of the switch is set by the combined on-voltage of a pMOS and an nMOS,and the difference between its gate-source voltage and the threshold voltage (VGST) is guaranteed to be constant with input variation. Thus, the body effect is nearly canceled.Implemented in a TSMC 0.18μm CMOS process, results from HSPICE simulation show that the VGST is nearly constant with an input range from 0.3 to 1.7V,and the - 3dB bandwidth is larger than 10GHz;the SFDR (spurious free dynamicrange) of the output is 67.11dB with 1GHz input frequency;the turn-on time is 2. 98ns,and the turn-off time is 1.35ns,which indicates a break-before-make action of the multiplexer. The proposed structure can be applied to high speed signal transmission.