CAJ | 학술논문

提出了新型的应用于粒子探测器CMOS读出电路中的电荷灵敏放大器和CR-(RC)n半高斯整形器的结构.电荷灵敏放大器采用多晶硅电阻做反馈来减小噪声,仿真发现与传统结构相比,在探测器电容高达150pF时,输入等效噪声电荷数由5036个电子减小到2381个,代价是输出摆幅减小了0.5V.在整形器中,MOS管电阻与多晶硅电阻串联,通过调节MOS管的栅压来改变阻值,以补偿工艺的偏差,在不明显降低线性度的情况下保证了时间常数能够比较精确控制.
제출료신형적응용우입자탐측기CMOS독출전로중적전하령민방대기화CR-(RC)n반고사정형기적결구.전하령민방대기채용다정규전조주반궤래감소조성,방진발현여전통결구상비,재탐측기전용고체150pF시,수입등효조성전하수유5036개전자감소도2381개,대개시수출파폭감소료0.5V.재정형기중,MOS관전조여다정규전조천련,통과조절MOS관적책압래개변조치,이보상공예적편차,재불명현강저선성도적정황하보증료시간상수능구비교정학공제.
Novel schemes for a charge sensitive amplifier (CSA) and a CR-(RC)n semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as feedback components to reduce noise. Compared with conventional CSA, the input referred equivalent noise charge(ENC) is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss. The CR-(RC)n semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.