CAJ | 학술논문

介绍了采用基于柠檬酸、硫酸和磷酸的腐蚀溶液对气态分子束外延生长的InP衬底上GaAs0.51 Sb0.49湿法腐蚀研究工作.对不同体积比的腐蚀溶液的腐蚀速率和表面粗糙度进行了研究.和硫酸及磷酸基腐蚀液相比,柠檬酸/双氧水腐蚀液的腐蚀速率较慢但具有很好的表面粗糙度.作为验征,采用最优体积比5∶1的柠檬酸/双氧水腐蚀溶液,工艺制备出InP/GaAsSb DHBT器件.
개소료채용기우저몽산、류산화린산적부식용액대기태분자속외연생장적InP츤저상GaAs0.51 Sb0.49습법부식연구공작.대불동체적비적부식용액적부식속솔화표면조조도진행료연구.화류산급린산기부식액상비,저몽산/쌍양수부식액적부식속솔교만단구유흔호적표면조조도.작위험정,채용최우체적비5∶1적저몽산/쌍양수부식용액,공예제비출InP/GaAsSb DHBT기건.
We present a study of wet etching of GaAs0.51 Sb0.49 grown on InP substrate with gas source molecular beam epitaxy(GSMBE)using citric acid，sulfuric acid as well as hosphoric acid based solutions.The etching rate and roughness of the etched surfaces were investigated with different volume ratio of the solutions.The citric acid/hydrogen peroxide solutions exhibit a slow etching rate but good roughness compared to the sulfuric acid and phosphoric acid based solutions.With the optimal volume ratio 5:1 of the citric acid/hydrogen peroxide etchant.the InP/GaAsSb DHBT device was processed and fabricated as a good evaluation.