半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2012年
1期
13-17,28
,共6页
张韧%杨洪文%鲍景富%阎跃鹏
張韌%楊洪文%鮑景富%閻躍鵬
장인%양홍문%포경부%염약붕
功率放大器%InGaP/GaAs HBT%W-LAN%线性化%偏置电路
功率放大器%InGaP/GaAs HBT%W-LAN%線性化%偏置電路
공솔방대기%InGaP/GaAs HBT%W-LAN%선성화%편치전로
power amplifier%InGaP/GaAs HBT%W-LAN%linear%bias circuit
介绍了一种应用于W-LAN系统的5.8 GHz InGaP/GaAs HBT MMIC功率放大器.该功率放大器采用了自适应线性化偏置电路来改善线性度和效率,同时偏置电路中的温度补偿电路可以抑制直流工作点随温度的变化,采用RC稳定网络使放大器在较宽频带内具有绝对稳定性.在单独供电3.6V电压情况下,功率放大器的增益为26 dB,1 dB压缩点处输出功率为26.4 dBm,功率附加效率( PAE)为25%.三阶交调系数(IMD3)在输出功率为26.4 dBm时为- 19 dBc,输出功率为20 dBm时低于- 38 dBc,在l dB压缩点处偏移频率为20 MHz时邻道功率比(ACPR)值为-31 dBc.
介紹瞭一種應用于W-LAN繫統的5.8 GHz InGaP/GaAs HBT MMIC功率放大器.該功率放大器採用瞭自適應線性化偏置電路來改善線性度和效率,同時偏置電路中的溫度補償電路可以抑製直流工作點隨溫度的變化,採用RC穩定網絡使放大器在較寬頻帶內具有絕對穩定性.在單獨供電3.6V電壓情況下,功率放大器的增益為26 dB,1 dB壓縮點處輸齣功率為26.4 dBm,功率附加效率( PAE)為25%.三階交調繫數(IMD3)在輸齣功率為26.4 dBm時為- 19 dBc,輸齣功率為20 dBm時低于- 38 dBc,在l dB壓縮點處偏移頻率為20 MHz時鄰道功率比(ACPR)值為-31 dBc.
개소료일충응용우W-LAN계통적5.8 GHz InGaP/GaAs HBT MMIC공솔방대기.해공솔방대기채용료자괄응선성화편치전로래개선선성도화효솔,동시편치전로중적온도보상전로가이억제직류공작점수온도적변화,채용RC은정망락사방대기재교관빈대내구유절대은정성.재단독공전3.6V전압정황하,공솔방대기적증익위26 dB,1 dB압축점처수출공솔위26.4 dBm,공솔부가효솔( PAE)위25%.삼계교조계수(IMD3)재수출공솔위26.4 dBm시위- 19 dBc,수출공솔위20 dBm시저우- 38 dBc,재l dB압축점처편이빈솔위20 MHz시린도공솔비(ACPR)치위-31 dBc.
A W-LAN 5.8 GHz InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier was presented. Linearity and efficiency were improved by using adaptive linear bias circuit and bias compensation circuit could suppress the temperature shift of bias point. RC stability circuit realized the unconditional stability of the amplifier. The amplifier's power-added efficiency (PAE) reaches 25%,the output power is 26.4 dBm at 1 dB compression point and its power gain is more than 26 dB at a single supply voltage of 3.6 V.The measured third-intermediation distortion (IMD3) is - 19 dBc at output power of 26.4 dBm and - 38 dBc at output power of 20 dBm respectively,and its adjacent channel power ratio (ACPR) is -31 dBc (20 MHz offset from the center frequency) at 1 dB compression point.