CAJ | 학술논문

文章研究了外加电场下谐振子量子线的电子拉曼散射.利用有效质量近似,以GaAs材料为例,计算了微分散射截面,结果表明,谐振子频率和外加电场的强度对拉曼光谱均有影响.拉曼光谱的峰值随着外加电场强度的增大而增大；在恒定的外加电场下,与电场方向相同的谐振子频率只影响峰值的大小,而与电场方向垂直方向的谐振子频率还对峰值的位置有影响.
문장연구료외가전장하해진자양자선적전자랍만산사.이용유효질량근사,이GaAs재료위례,계산료미분산사절면,결과표명,해진자빈솔화외가전장적강도대랍만광보균유영향.랍만광보적봉치수착외가전장강도적증대이증대；재항정적외가전장하,여전장방향상동적해진자빈솔지영향봉치적대소,이여전장방향수직방향적해진자빈솔환대봉치적위치유영향.
Electron Raman scattering (ERS) is investigated in harmonic oscillators quantum wire (HOQW)with an applied electric field in the framework of effective-mass.Numerical calculations of the differential crosssection (DCS) are performed for GaAs quantum wire (QW).The results show that the Raman spectrum are influenced by harmonic oscillator frequency and external electric field.The peak value became larger as the external electric field increased.In a constant external electric field,the harmonic oscillator frequency parallelling to the direction of electric field has impact only on the peaks value,but the perpendicular frequency shifts the Raman spectrum.